A Compact Model for Digital Circuits Operating Near Threshold in Deep-Submicrometer MOSFET

Wenjie Wang, Pingping Yu, Yanfeng Jiang

Research output: Contribution to journalArticlepeer-review

Abstract

Integrated circuits operated in the near-threshold region exhibit specific merit with high energy efficiency. A near-threshold model is highly required for the circuit design. In this paper, a near-threshold drain current model is proposed based on the surface inversion layer charge model for analyzing digital circuits. The short-channel effect in deep submicrometer is also included in the model. Moreover, the delay and energy parts based on the near-threshold drain current model are derived and integrated in the model. Two process design kits (PDKs) are used for parameter extraction to demonstrate the feasibility of the proposed model. The results show that the proposed model can be used for the near-threshold circuit calculation, with the benefit of high accuracy.

Original languageEnglish (US)
Article number8678909
Pages (from-to)2081-2085
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume66
Issue number5
DOIs
StatePublished - May 2019
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received January 8, 2019; revised February 20, 2019; accepted March 13, 2019. Date of publication April 1, 2019; date of current version April 22, 2019. This work was supported by the National Nature Science Foundation of China (NSFC) under Grant 61774078. The review of this paper was arranged by Editor B. Iñiguez. (Corresponding author: Yanfeng Jiang.) The authors are with the Department of Microelectronics, College of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China (e-mail: 981169842@qq.com; pingpingyu@jiangnan.edu.cn; jiangyf@jiangnan.edu.cn).

Publisher Copyright:
© 2019 IEEE.

Keywords

  • Energy efficient
  • inversion layer charge model
  • near threshold
  • parameter extraction

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