A Compact Model for Digital Circuits Operating Near Threshold in Deep-Submicrometer MOSFET

Wenjie Wang, Pingping Yu, Yanfeng Jiang

Research output: Contribution to journalArticle

Abstract

Integrated circuits operated in the near-threshold region exhibit specific merit with high energy efficiency. A near-threshold model is highly required for the circuit design. In this paper, a near-threshold drain current model is proposed based on the surface inversion layer charge model for analyzing digital circuits. The short-channel effect in deep submicrometer is also included in the model. Moreover, the delay and energy parts based on the near-threshold drain current model are derived and integrated in the model. Two process design kits (PDKs) are used for parameter extraction to demonstrate the feasibility of the proposed model. The results show that the proposed model can be used for the near-threshold circuit calculation, with the benefit of high accuracy.

Original languageEnglish (US)
Article number8678909
Pages (from-to)2081-2085
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume66
Issue number5
DOIs
StatePublished - May 2019

Keywords

  • Energy efficient
  • inversion layer charge model
  • near threshold
  • parameter extraction

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