A compact high-sensitivity 2-Transistor radiation sensor array

Qianying Tang, Saurabh Kumar, Chris H. Kim, David E. Fulkerson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A compact 2 Transistor (2T) radiation sensor with a tunable measurement sensitivity was implemented in a 65nm LP bulk process. Alpha radiation tests show a 117X higher cross-section area per cell for the proposed sensor as compared to a 6T SRAM test structure. The critical Linear Energy Transfer (LET)of the proposed 2T sensor was estimated to be 3.4x-4.2x lowerthan that of an inverter cell or SRAM cell for supply voltages 0.75V to 1.5V. The proposed sensor can facilitate the development of radiation models and hardening techniques by enabling a statistically significant number of events from a small silicon area using inexpensive radiation sources.

Original languageEnglish (US)
Title of host publication2017 International Reliability Physics Symposium, IRPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesSE7.1-SE7.4
ISBN (Electronic)9781509066407
DOIs
StatePublished - May 30 2017
Event2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
Duration: Apr 2 2017Apr 6 2017

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2017 International Reliability Physics Symposium, IRPS 2017
CountryUnited States
CityMonterey
Period4/2/174/6/17

Keywords

  • 2T sensor
  • SRAM
  • alpha particle
  • inverter chain
  • radiation sensor
  • soft error

Fingerprint Dive into the research topics of 'A compact high-sensitivity 2-Transistor radiation sensor array'. Together they form a unique fingerprint.

Cite this