Abstract
A compact 2 Transistor (2T) radiation sensor with a tunable measurement sensitivity was implemented in a 65nm LP bulk process. Alpha radiation tests show a 117X higher cross-section area per cell for the proposed sensor as compared to a 6T SRAM test structure. The critical Linear Energy Transfer (LET)of the proposed 2T sensor was estimated to be 3.4x-4.2x lowerthan that of an inverter cell or SRAM cell for supply voltages 0.75V to 1.5V. The proposed sensor can facilitate the development of radiation models and hardening techniques by enabling a statistically significant number of events from a small silicon area using inexpensive radiation sources.
Original language | English (US) |
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Title of host publication | 2017 International Reliability Physics Symposium, IRPS 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | SE7.1-SE7.4 |
ISBN (Electronic) | 9781509066407 |
DOIs | |
State | Published - May 30 2017 |
Event | 2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States Duration: Apr 2 2017 → Apr 6 2017 |
Publication series
Name | IEEE International Reliability Physics Symposium Proceedings |
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ISSN (Print) | 1541-7026 |
Other
Other | 2017 International Reliability Physics Symposium, IRPS 2017 |
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Country/Territory | United States |
City | Monterey |
Period | 4/2/17 → 4/6/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Keywords
- 2T sensor
- SRAM
- alpha particle
- inverter chain
- radiation sensor
- soft error