This paper presents a synthesized version of the silicon odometer aging sensor for measuring the frequency degradation caused by device degradation mechanisms in high volume semiconductor products. In the design, three ring oscillators (ROSCs) composed of inverter, NAND, and NOR gates are implemented in register-transfer-level (RTL), with the ability to be stressed in an AC or DC stress condition. The new odometer has product level features such as calibration-free operation, automatic frequency dead zone escape, and start-up glitch removal. The odometer verilog code was synthesized and automatically placed-and-routed in three different technologies using standard ASIC design tools. As a proof of concept, we show aging data collected from a 65nm test chip with 12 synthesized odometer instances. The open-source RTL files and testbench of the synthesizable odometer can be downloaded from https://github.com/reliability-research/odometer.
|Original language||English (US)|
|Title of host publication||2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - 2022|
|Event||2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States|
Duration: Mar 27 2022 → Mar 31 2022
|Name||2022 IEEE International Reliability Physics Symposium (IRPS)|
|Conference||2022 IEEE International Reliability Physics Symposium, IRPS 2022|
|Period||3/27/22 → 3/31/22|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported in part by Semiconductor Research Corporation Task No. 2810.070 through the Texas Analog Center of Excellence (TxACE).
© 2022 IEEE.
- Silicon odometer
- aging sensor
- ring oscillators