A black phosphorus FET integrated on a silicon waveguide for high speed, low dark current photodetection

Nathan Youngblood, Che Chen, Steven J. Koester, Mo Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A waveguide-integrated black phosphorus photodetector with high responsivity and low dark current is demonstrated for telecom wavelengths with an RC-limited bandwidth of 3 GHz. Electrostatic doping and frequency dependent photoresponse are used to identify photocurrent generation mechanisms.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

    Fingerprint

Keywords

  • Doping
  • Graphene
  • High-speed optical techniques
  • Logic gates
  • Optical device fabrication
  • Optical waveguides
  • Photoconductivity

Cite this

Youngblood, N., Chen, C., Koester, S. J., & Li, M. (2015). A black phosphorus FET integrated on a silicon waveguide for high speed, low dark current photodetection. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7183904] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..