A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications

Seung Hwan Song; Ki Chul Chun; Chris H. Kim

doi:10.1109/CICC.2013.6658453

A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications

Seung Hwan Song, Ki Chul Chun, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A bit-by-bit re-writable embedded flash memory is demonstrated in a generic 65nm logic process for moderate-density embedded non-volatile memory applications. The proposed 6T embedded flash memory cell improves the overall cell endurance by eliminating redundant program/erase cycles without disturbing cells in the unselected wordlines. A multistory high voltage switch utilizes four boosted supply levels generated by a compact voltage doubler based on-chip negative charge pump.

Original language	English (US)
Title of host publication	Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781467361460
DOIs	https://doi.org/10.1109/CICC.2013.6658453
State	Published - Nov 7 2013
Event	35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 - San Jose, CA, United States Duration: Sep 22 2013 → Sep 25 2013

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Other	35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
Country/Territory	United States
City	San Jose, CA
Period	9/22/13 → 9/25/13

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10.1109/CICC.2013.6658453

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A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications. / Song, Seung Hwan; Chun, Ki Chul; Kim, Chris H.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. 6658453.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, SH, Chun, KC & Kim, CH 2013, A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications. in Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013., 6658453, Institute of Electrical and Electronics Engineers Inc., 35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013, San Jose, CA, United States, 9/22/13. https://doi.org/10.1109/CICC.2013.6658453

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A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications

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