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A 455-Mb/s MR preamplifier design in a 0.8-μm CMOS process
Ramesh Harjani
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
7
Scopus citations
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Dive into the research topics of 'A 455-Mb/s MR preamplifier design in a 0.8-μm CMOS process'. Together they form a unique fingerprint.
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Keyphrases
Magnetoresistance
100%
CMOS Process
100%
Preamplifier
100%
Current Noise
50%
Submicron
25%
MOS Devices
25%
CMOS Design
25%
Disk Drive
25%
Bias Current
25%
BiCMOS
25%
Voltage Noise
25%
3-dB Bandwidth
25%
Voltage Amplifier
25%
Gain Constraint
25%
CMOS Preamplifier
25%
Measured Gain
25%
Die Area
25%
Bandwidth Limitation
25%
Low Noise
25%
Transimpedance Amplifier
25%
Earth and Planetary Sciences
Low Noise
100%
Voltage Amplifier
100%
Engineering
Preamplifier
100%
Amplifier
40%
Data Rate
20%
Db Bandwidth
20%
Noise Voltage
20%