A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

D. E. Grider; I. R. Mactaggart; J. C. Nohava; J. J. Stronczer; P. P. Ruden; T. E. Nohava; D. Fulkerson; D. E. Tetzlaff

A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

D. E. Grider, I. R. Mactaggart, J. C. Nohava, J. J. Stronczer, P. P. Ruden, T. E. Nohava, D. Fulkerson, D. E. Tetzlaff

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

Delta-doped pseudomorphic In_yGa_1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	71-74
Number of pages	4
ISBN (Print)	078030196X
State	Published - Jan 1 1992
Event	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA Duration: Oct 20 1991 → Oct 23 1991

Publication series

Name	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

Other	13th Annual GaAs IC Symposium Technical Digest
City	Monterey, CA, USA
Period	10/20/91 → 10/23/91

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Grider, D. E., Mactaggart, I. R., Nohava, J. C., Stronczer, J. J., Ruden, P. P., Nohava, T. E., Fulkerson, D., & Tetzlaff, D. E. (1992). A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 71-74). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.

A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. / Grider, D. E.; Mactaggart, I. R.; Nohava, J. C. et al.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. p. 71-74 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grider, DE, Mactaggart, IR, Nohava, JC, Stronczer, JJ, Ruden, PP, Nohava, TE, Fulkerson, D & Tetzlaff, DE 1992, A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), Publ by IEEE, pp. 71-74, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.

Grider DE, Mactaggart IR, Nohava JC, Stronczer JJ, Ruden PP, Nohava TE et al. A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE. 1992. p. 71-74. (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Grider, D. E. ; Mactaggart, I. R. ; Nohava, J. C. et al. / A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. pp. 71-74 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

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title = "A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology",

abstract = "Delta-doped pseudomorphic InyGa1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.",

author = "Grider, {D. E.} and Mactaggart, {I. R.} and Nohava, {J. C.} and Stronczer, {J. J.} and Ruden, {P. P.} and Nohava, {T. E.} and D. Fulkerson and Tetzlaff, {D. E.}",

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T1 - A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

AU - Grider, D. E.

AU - Mactaggart, I. R.

AU - Nohava, J. C.

AU - Stronczer, J. J.

AU - Ruden, P. P.

AU - Nohava, T. E.

AU - Fulkerson, D.

AU - Tetzlaff, D. E.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Delta-doped pseudomorphic InyGa1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.

AB - Delta-doped pseudomorphic InyGa1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.

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M3 - Conference contribution

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T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

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EP - 74

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 13th Annual GaAs IC Symposium Technical Digest

Y2 - 20 October 1991 through 23 October 1991

ER -

A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

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