A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

D. E. Grider, I. R. Mactaggart, J. C. Nohava, J. J. Stronczer, P. P. Ruden, T. E. Nohava, D. Fulkerson, D. E. Tetzlaff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Delta-doped pseudomorphic InyGa1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.

Original languageEnglish (US)
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherPubl by IEEE
Pages71-74
Number of pages4
ISBN (Print)078030196X
StatePublished - Jan 1 1992
Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
Duration: Oct 20 1991Oct 23 1991

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

Other13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA
Period10/20/9110/23/91

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Grider, D. E., Mactaggart, I. R., Nohava, J. C., Stronczer, J. J., Ruden, P. P., Nohava, T. E., Fulkerson, D., & Tetzlaff, D. E. (1992). A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 71-74). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.