A 3D NAND Flash Ready 8-Bit Convolutional Neural Network Core Demonstrated in a Standard Logic Process

M. Kim, M. Liu, L. Everson, G. Park, Y. Jeon, S. Kim, S. Lee, S. Song, C. H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A convolutional neural network (CNN) core that can be readily mapped to a 3D NAND flash array was demonstrated in a standard 65nm CMOS process. Logic-compatible embedded flash memory cells were used for storing multi-level synaptic weights while a bit-serial architecture enables 8 bit multiply-and-accumulate operation. A novel back-pattern tolerant program-verify scheme reduces the cell current variation to less than 0.6μA. Positive and negative weights are stored in eFlash cells in adjacent bitlines, generating a differential output signal. Our eNAND based neural network core achieves a 98.5% handwritten digit recognition accuracy which is close to the software accuracy of 99.0% for the same precision. This work represents the first physical demonstration of an embedded NAND Flash based neuromorphic chip in a standard logic process.

Original languageEnglish (US)
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
StatePublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: Dec 7 2019Dec 11 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period12/7/1912/11/19

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Kim, M., Liu, M., Everson, L., Park, G., Jeon, Y., Kim, S., Lee, S., Song, S., & Kim, C. H. (2019). A 3D NAND Flash Ready 8-Bit Convolutional Neural Network Core Demonstrated in a Standard Logic Process. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993574] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993574