A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

F. Liu; R. R. Yu; A. M. Young; L. Shi; K. A. Jenkins; X. Gu; N. R. Klymko; S. Purushothaman; S. J. Koester; W. Haensch

doi:10.4032/9789814303828

A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

F. Liu
, R. R. Yu
, A. M. Young
, L. Shi
, K. A. Jenkins
, X. Gu
, N. R. Klymko
, S. Purushothaman
, S. J. Koester
, W. Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	English (US)
Title of host publication	3D Integration for VLSI Systems
Publisher	Pan Stanford Publishing Pte. Ltd.
Pages	263-295
Number of pages	33
ISBN (Print)	9789814303811
DOIs	https://doi.org/10.4032/9789814303828
State	Published - Sep 30 2011

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10.4032/9789814303828

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Liu, F., Yu, R. R., Young, A. M., Shi, L., Jenkins, K. A., Gu, X., Klymko, N. R., Purushothaman, S., Koester, S. J., & Haensch, W. (2011). A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding. In 3D Integration for VLSI Systems (pp. 263-295). Pan Stanford Publishing Pte. Ltd.. https://doi.org/10.4032/9789814303828

@inbook{f529de84ce7445549fc5520ff353bb5c,

title = "A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding",

author = "F. Liu and Yu, \{R. R.\} and Young, \{A. M.\} and L. Shi and Jenkins, \{K. A.\} and X. Gu and Klymko, \{N. R.\} and S. Purushothaman and Koester, \{S. J.\} and W. Haensch",

year = "2011",

month = sep,

day = "30",

doi = "10.4032/9789814303828",

language = "English (US)",

isbn = "9789814303811",

pages = "263--295",

booktitle = "3D Integration for VLSI Systems",

publisher = "Pan Stanford Publishing Pte. Ltd.",

}

TY - CHAP

T1 - A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

AU - Liu, F.

AU - Yu, R. R.

AU - Young, A. M.

AU - Shi, L.

AU - Jenkins, K. A.

AU - Gu, X.

AU - Klymko, N. R.

AU - Purushothaman, S.

AU - Koester, S. J.

AU - Haensch, W.

PY - 2011/9/30

Y1 - 2011/9/30

UR - https://www.scopus.com/pages/publications/84881817769

UR - https://www.scopus.com/pages/publications/84881817769#tab=citedBy

U2 - 10.4032/9789814303828

DO - 10.4032/9789814303828

M3 - Chapter

AN - SCOPUS:84881817769

SN - 9789814303811

SP - 263

EP - 295

BT - 3D Integration for VLSI Systems

PB - Pan Stanford Publishing Pte. Ltd.

ER -

A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

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