A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

F. Liu; R. R. Yu; A. M. Young; L. Shi; K. A. Jenkins; X. Gu; N. R. Klymko; S. Purushothaman; S. J. Koester; W. Haensch

doi:10.4032/9789814303828

A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

F. Liu, R. R. Yu, A. M. Young, L. Shi, K. A. Jenkins, X. Gu, N. R. Klymko, S. Purushothaman, S. J. Koester, W. Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	English (US)
Title of host publication	3D Integration for VLSI Systems
Publisher	Pan Stanford Publishing Pte. Ltd.
Pages	263-295
Number of pages	33
ISBN (Print)	9789814303811
DOIs	https://doi.org/10.4032/9789814303828
State	Published - Sep 30 2011

Publisher link

10.4032/9789814303828

Find It

Find It at U of M Libraries

Cite this

Liu, F., Yu, R. R., Young, A. M., Shi, L., Jenkins, K. A., Gu, X., Klymko, N. R., Purushothaman, S., Koester, S. J., & Haensch, W. (2011). A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding. In 3D Integration for VLSI Systems (pp. 263-295). Pan Stanford Publishing Pte. Ltd.. https://doi.org/10.4032/9789814303828

@inbook{f529de84ce7445549fc5520ff353bb5c,

title = "A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding",

author = "F. Liu and Yu, {R. R.} and Young, {A. M.} and L. Shi and Jenkins, {K. A.} and X. Gu and Klymko, {N. R.} and S. Purushothaman and Koester, {S. J.} and W. Haensch",

year = "2011",

month = sep,

day = "30",

doi = "10.4032/9789814303828",

language = "English (US)",

isbn = "9789814303811",

pages = "263--295",

booktitle = "3D Integration for VLSI Systems",

publisher = "Pan Stanford Publishing Pte. Ltd.",

}

TY - CHAP

T1 - A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

AU - Liu, F.

AU - Yu, R. R.

AU - Young, A. M.

AU - Shi, L.

AU - Jenkins, K. A.

AU - Gu, X.

AU - Klymko, N. R.

AU - Purushothaman, S.

AU - Koester, S. J.

AU - Haensch, W.

PY - 2011/9/30

Y1 - 2011/9/30

UR - http://www.scopus.com/inward/record.url?scp=84881817769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881817769&partnerID=8YFLogxK

U2 - 10.4032/9789814303828

DO - 10.4032/9789814303828

M3 - Chapter

AN - SCOPUS:84881817769

SN - 9789814303811

SP - 263

EP - 295

BT - 3D Integration for VLSI Systems

PB - Pan Stanford Publishing Pte. Ltd.

ER -

A 300-mm wafer-level three-dimensional integration scheme using Tungsten through-silicon via and hybrid Cu-adhesive bonding

Publisher link

Find It

Other files and links

Cite this