@inproceedings{fa9dddd054f141ea9b2b3aceccfaae31,
title = "A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding",
abstract = "A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 μm), small critical dimension (1.5 μm), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom wafer. The process also features thinning of the top wafer to 20 μm and a Cu backside BEOL on the thinned top wafer. The electrical and physical properties of the TSVs and bonded interconnect are presented and show RLC values that satisfy both the power delivery and high-speed signaling requirements for high-performance 3D systems.",
author = "F. Liu and Yu, {R. R.} and Young, {A. M.} and Doyle, {J. P.} and X. Wang and L. Shi and Chen, {K. N.} and X. Li and Dipaola, {D. A.} and D. Brown and Ryan, {C. T.} and Hagan, {J. A.} and Wong, {K. H.} and M. Lu and X. Gu and Klymko, {N. R.} and Perfecto, {E. D.} and Merryman, {A. G.} and Kelly, {K. A.} and S. Purushothaman and Koester, {S. J.} and R. Wisnieff and W. Haensch",
year = "2008",
doi = "10.1109/IEDM.2008.4796762",
language = "English (US)",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}