A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

Yahya M. Tousi, Omeed Momeni, Ehsan Afshari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

70 Scopus citations

Abstract

Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy and communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off frequency of transistors and their low breakdown voltage. A recent work has demonstrated generation of high power at a fixed frequency in the sub-mm-Wave range using a harmonic oscillator [1]. However, for most applications a tunable signal source is necessary. In previous works, frequency multipliers are used as an alternative for tunable power generation above 150GHz [2]. In this work, for the first time we introduce a tunable high-power oscillator at sub-mm-Wave frequencies in low-power (LP) bulk CMOS.

Original languageEnglish (US)
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages258-259
Number of pages2
DOIs
StatePublished - May 11 2012
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: Feb 19 2012Feb 23 2012

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period2/19/122/23/12

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Tousi, Y. M., Momeni, O., & Afshari, E. (2012). A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers (pp. 258-259). [6177000] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55). https://doi.org/10.1109/ISSCC.2012.6177000