A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

Yahya M. Tousi; Omeed Momeni; Ehsan Afshari

doi:10.1109/ISSCC.2012.6177000

A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

Yahya M. Tousi, Omeed Momeni, Ehsan Afshari

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

88 Scopus citations

Abstract

Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy and communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off frequency of transistors and their low breakdown voltage. A recent work has demonstrated generation of high power at a fixed frequency in the sub-mm-Wave range using a harmonic oscillator [1]. However, for most applications a tunable signal source is necessary. In previous works, frequency multipliers are used as an alternative for tunable power generation above 150GHz [2]. In this work, for the first time we introduce a tunable high-power oscillator at sub-mm-Wave frequencies in low-power (LP) bulk CMOS.

Original language	English (US)
Title of host publication	2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages	258-259
Number of pages	2
DOIs	https://doi.org/10.1109/ISSCC.2012.6177000
State	Published - 2012
Event	59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States Duration: Feb 19 2012 → Feb 23 2012

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	55
ISSN (Print)	0193-6530

Other

Other	59th International Solid-State Circuits Conference, ISSCC 2012
Country/Territory	United States
City	San Francisco, CA
Period	2/19/12 → 2/23/12

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10.1109/ISSCC.2012.6177000

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Tousi, Y. M., Momeni, O., & Afshari, E. (2012). A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers (pp. 258-259). Article 6177000 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55). https://doi.org/10.1109/ISSCC.2012.6177000

A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS. / Tousi, Yahya M.; Momeni, Omeed; Afshari, Ehsan.
2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. p. 258-259 6177000 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tousi, YM, Momeni, O & Afshari, E 2012, A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS. in 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers., 6177000, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 55, pp. 258-259, 59th International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, United States, 2/19/12. https://doi.org/10.1109/ISSCC.2012.6177000

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AB - Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy and communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off frequency of transistors and their low breakdown voltage. A recent work has demonstrated generation of high power at a fixed frequency in the sub-mm-Wave range using a harmonic oscillator [1]. However, for most applications a tunable signal source is necessary. In previous works, frequency multipliers are used as an alternative for tunable power generation above 150GHz [2]. In this work, for the first time we introduce a tunable high-power oscillator at sub-mm-Wave frequencies in low-power (LP) bulk CMOS.

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A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS

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