A 273 MHz low noise CMOS MR preamplifier for disk drives

Jeremy Kuehlwein; Ramesh Harjani

doi:10.1109/ASIC.1999.806532

A 273 MHz low noise CMOS MR preamplifier for disk drives

Jeremy Kuehlwein, Ramesh Harjani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this paper we present the design for a high speed low noise preamplifier for use with magnetoresistive read elements in disk drive channels. The performance of the reader circuit is comparable with the more expensive current generation of BiCMOS MR preamplifiers. The measured results include a gain of 43 dB, a 3 dB bandwidth of 273 MHz, input-referred voltage noise that is less than 0.57 nV/√(Hz), and input-referred current noise that is less than 10.54 pA/√(Hz). The preamplifier has been implemented in a 0.8-μm CMOS process and occupies a die area of 1.78×1.78 mm².

Original language	English (US)
Title of host publication	Proceedings - 12th Annual IEEE International ASIC/SOC Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	347-351
Number of pages	5
ISBN (Electronic)	0780356322, 9780780356320
DOIs	https://doi.org/10.1109/ASIC.1999.806532
State	Published - 1999
Event	12th Annual IEEE International ASIC/SOC Conference - Washington, United States Duration: Sep 15 1999 → Sep 18 1999

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Name	Proceedings - 12th Annual IEEE International ASIC/SOC Conference

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Other	12th Annual IEEE International ASIC/SOC Conference
Country/Territory	United States
City	Washington
Period	9/15/99 → 9/18/99

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10.1109/ASIC.1999.806532

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A 273 MHz low noise CMOS MR preamplifier for disk drives. / Kuehlwein, Jeremy; Harjani, Ramesh.
Proceedings - 12th Annual IEEE International ASIC/SOC Conference. Institute of Electrical and Electronics Engineers Inc., 1999. p. 347-351 806532 (Proceedings - 12th Annual IEEE International ASIC/SOC Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuehlwein, J & Harjani, R 1999, A 273 MHz low noise CMOS MR preamplifier for disk drives. in Proceedings - 12th Annual IEEE International ASIC/SOC Conference., 806532, Proceedings - 12th Annual IEEE International ASIC/SOC Conference, Institute of Electrical and Electronics Engineers Inc., pp. 347-351, 12th Annual IEEE International ASIC/SOC Conference, Washington, United States, 9/15/99. https://doi.org/10.1109/ASIC.1999.806532

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title = "A 273 MHz low noise CMOS MR preamplifier for disk drives",

abstract = "In this paper we present the design for a high speed low noise preamplifier for use with magnetoresistive read elements in disk drive channels. The performance of the reader circuit is comparable with the more expensive current generation of BiCMOS MR preamplifiers. The measured results include a gain of 43 dB, a 3 dB bandwidth of 273 MHz, input-referred voltage noise that is less than 0.57 nV/√(Hz), and input-referred current noise that is less than 10.54 pA/√(Hz). The preamplifier has been implemented in a 0.8-μm CMOS process and occupies a die area of 1.78×1.78 mm2.",

author = "Jeremy Kuehlwein and Ramesh Harjani",

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year = "1999",

doi = "10.1109/ASIC.1999.806532",

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AU - Kuehlwein, Jeremy

AU - Harjani, Ramesh

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N2 - In this paper we present the design for a high speed low noise preamplifier for use with magnetoresistive read elements in disk drive channels. The performance of the reader circuit is comparable with the more expensive current generation of BiCMOS MR preamplifiers. The measured results include a gain of 43 dB, a 3 dB bandwidth of 273 MHz, input-referred voltage noise that is less than 0.57 nV/√(Hz), and input-referred current noise that is less than 10.54 pA/√(Hz). The preamplifier has been implemented in a 0.8-μm CMOS process and occupies a die area of 1.78×1.78 mm2.

AB - In this paper we present the design for a high speed low noise preamplifier for use with magnetoresistive read elements in disk drive channels. The performance of the reader circuit is comparable with the more expensive current generation of BiCMOS MR preamplifiers. The measured results include a gain of 43 dB, a 3 dB bandwidth of 273 MHz, input-referred voltage noise that is less than 0.57 nV/√(Hz), and input-referred current noise that is less than 10.54 pA/√(Hz). The preamplifier has been implemented in a 0.8-μm CMOS process and occupies a die area of 1.78×1.78 mm2.

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BT - Proceedings - 12th Annual IEEE International ASIC/SOC Conference

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 15 September 1999 through 18 September 1999

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A 273 MHz low noise CMOS MR preamplifier for disk drives

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