A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS

B. Jung; R. Harjani

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS

B. Jung, R. Harjani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

32 Scopus citations

Abstract

This paper presents a 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9mW, and the measured phase noise at 1MHz offset is -101.2dBc/Hz.

Original language	English (US)
Title of host publication	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Editors	L.C. Fujino, M. Amiri, A. Grabel, D. Jaeger, K.C. Smith
Volume	47
State	Published - 2003
Event	Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement - San Francisco, CA., United States Duration: Feb 15 2003 → Feb 19 2003

Other

Other	Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement
Country/Territory	United States
City	San Francisco, CA.
Period	2/15/03 → 2/19/03

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Jung, B & Harjani, R 2003, A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. in LC Fujino, M Amiri, A Grabel, D Jaeger & KC Smith (eds), Digest of Technical Papers - IEEE International Solid-State Circuits Conference. vol. 47, Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement, San Francisco, CA., United States, 2/15/03.

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title = "A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS",

abstract = "This paper presents a 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9mW, and the measured phase noise at 1MHz offset is -101.2dBc/Hz.",

author = "B. Jung and R. Harjani",

year = "2003",

language = "English (US)",

volume = "47",

editor = "L.C. Fujino and M. Amiri and A. Grabel and D. Jaeger and K.C. Smith",

booktitle = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

note = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement ; Conference date: 15-02-2003 Through 19-02-2003",

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TY - GEN

T1 - A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS

AU - Jung, B.

AU - Harjani, R.

PY - 2003

Y1 - 2003

N2 - This paper presents a 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9mW, and the measured phase noise at 1MHz offset is -101.2dBc/Hz.

AB - This paper presents a 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9mW, and the measured phase noise at 1MHz offset is -101.2dBc/Hz.

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UR - http://www.scopus.com/inward/citedby.url?scp=2442664190&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2442675159

VL - 47

BT - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

A2 - Fujino, L.C.

A2 - Amiri, M.

A2 - Grabel, A.

A2 - Jaeger, D.

A2 - Smith, K.C.

T2 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement

Y2 - 15 February 2003 through 19 February 2003

ER -

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS

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