A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS

B. Jung, R. Harjani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

28 Scopus citations

Abstract

This paper presents a 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. A differential capacitive emitter degenerated structure is used as a negative resistance cell that has extremely low parasitic capacitance. The VCO core consumes 9mW, and the measured phase noise at 1MHz offset is -101.2dBc/Hz.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
EditorsL.C. Fujino, M. Amiri, A. Grabel, D. Jaeger, K.C. Smith
Volume47
StatePublished - 2003
EventDigest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement - San Francisco, CA., United States
Duration: Feb 15 2003Feb 19 2003

Other

OtherDigest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement
CountryUnited States
CitySan Francisco, CA.
Period2/15/032/19/03

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Jung, B., & Harjani, R. (2003). A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOS. In L. C. Fujino, M. Amiri, A. Grabel, D. Jaeger, & K. C. Smith (Eds.), Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 47)