TY - GEN
T1 - A 20μW 95dB DR single-bit delta-sigma modulator for portable measurement applications
AU - Xu, Jian
AU - Wang, Hanqing
AU - Wu, Xiaobo
PY - 2010
Y1 - 2010
N2 - A low power high performance Delta-Sigma modulator for portable measurement applications is presented in this paper. To reduce the power consumption and ensure high performance, a comprehensive system-level design adopting a new method to determine the DC gain value of Operational Transconductance Amplifier (OTA) and considering the effect of 1/f noise is introduced. Besides, a novel power efficient current mirror Class-AB OTA with a fast-settling less-error switched-capacitor common-mode feedback (SC CMFB) circuit is proposed in this design. And the bottom terminal parasitic- effect of Poly-Insulator-Poly (PIP) capacitors is also considered. Therefore, about extra 20% of the capacitance is added to the total capacitance load. In addition, an area-efficient power-efficient resonator is adopted to realize a coefficient of 1/90 for 50% power and 75% area cost reduction over the conventional design. The chip is implemented in a low cost standard 0.35μm CMOS. Its total power is only 20μW at a 1.5V supply, and the measured Dynamic Range (DR) is 95dB over the 1 kHz bandwidth. The designed modulator shows very high Figure-of-Merit (FOM) among the recent low power high performance modulators.
AB - A low power high performance Delta-Sigma modulator for portable measurement applications is presented in this paper. To reduce the power consumption and ensure high performance, a comprehensive system-level design adopting a new method to determine the DC gain value of Operational Transconductance Amplifier (OTA) and considering the effect of 1/f noise is introduced. Besides, a novel power efficient current mirror Class-AB OTA with a fast-settling less-error switched-capacitor common-mode feedback (SC CMFB) circuit is proposed in this design. And the bottom terminal parasitic- effect of Poly-Insulator-Poly (PIP) capacitors is also considered. Therefore, about extra 20% of the capacitance is added to the total capacitance load. In addition, an area-efficient power-efficient resonator is adopted to realize a coefficient of 1/90 for 50% power and 75% area cost reduction over the conventional design. The chip is implemented in a low cost standard 0.35μm CMOS. Its total power is only 20μW at a 1.5V supply, and the measured Dynamic Range (DR) is 95dB over the 1 kHz bandwidth. The designed modulator shows very high Figure-of-Merit (FOM) among the recent low power high performance modulators.
KW - Delta-Sigma modulator
KW - High performance
KW - Low power
KW - Switched capacitor circuits
UR - https://www.scopus.com/pages/publications/79952432515
UR - https://www.scopus.com/pages/publications/79952432515#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:79952432515
SN - 9789881701282
T3 - Proceedings of the International MultiConference of Engineers and Computer Scientists 2010, IMECS 2010
SP - 1227
EP - 1232
BT - Proceedings of the International MultiConference of Engineers and Computer Scientists 2010, IMECS 2010
T2 - International MultiConference of Engineers and Computer Scientists 2010, IMECS 2010
Y2 - 17 March 2010 through 19 March 2010
ER -