A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell refresh power

Wei Zhang, Mingjing Ha, Daniele Braga, Michael J. Renn, C. Daniel Frisbie, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don't have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device presents major circuit design challenges for OTFT-based systems.

Original languageEnglish (US)
Title of host publication2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011
Pages326-327
Number of pages2
DOIs
StatePublished - May 12 2011
Event2011 IEEE International Solid-State Circuits Conference, ISSCC 2011 - San Francisco, CA, United States
Duration: Feb 20 2011Feb 24 2011

Other

Other2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
CountryUnited States
CitySan Francisco, CA
Period2/20/112/24/11

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Zhang, W., Ha, M., Braga, D., Renn, M. J., Frisbie, C. D., & Kim, C. H. (2011). A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell refresh power. In 2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011 (pp. 326-327). [5746339] https://doi.org/10.1109/ISSCC.2011.5746339