A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC

C. L. Schow; L. Schares; S. J. Koester; G. Dehlinger; R. John; F. E. Doany

doi:10.1109/LPT.2006.880770

A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC

C. L. Schow, L. Schares, S. J. Koester, G. Dehlinger, R. John, F. E. Doany

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

We report the fastest (15 Gb/s) and lowest voltage (2.4V) all-silicon-based optical receiver to date. The receiver consists of a lateral, interdigitated, germanium-on-silicon-on-insulator (Ge-on-SOI) photodiode wire-bonded to a 0.13-μm complementary metal-oxide-semiconductor (CMOS) receiver integrated circuit (IC). The photodiode has an external quantum efficiency of 52% at λ = 850 nm and a dark current of 10 nA at - 2 V. The small-signal transimpedance of the receiver is 91-dB Ω and the bandwidth is 6.6 GHz. At a bit-error rate of 10^-12 and λ = 850 nm the receiver exhibits sensitivities of - 11.0, - 9.6, and - 7.4 dBm at 12.5, 14, and 15 Gb/s, respectively. The receiver operates error-free at rates up to 10 Gb/s with an IC supply voltage as low as 1.5 V and with a photodiode bias as low as 0.5 V. The power consumption is 3 to 7 mW/Gb/s. The Ge-on-SOI photodiode is well suited for integration with CMOS processing, raising the possibility of producing high-performance, low-voltage, monolithically integrated receivers based on this technology in the future.

Original language	English (US)
Pages (from-to)	1981-1983
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2006.880770
State	Published - Oct 1 2006

Bibliographical note

Funding Information:
Manuscript received May 18, 2006. This work was supported in part by Defense Advanced Research Projects Agency (DARPA) under contract MDA972-03-3-0004. The authors are with Watson Research Center, IBM, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2006.880770

Keywords

Complementary metal-oxide-semiconductor (CMOS) analog integrated circuits
Germanium (Ge)
Optical receivers
Photodiodes
Silicon-on-insulator (SOI) technology

Publisher link

10.1109/LPT.2006.880770

Find It

Find It at U of M Libraries

Cite this

@article{90413077750b481084322e479c0bdb5f,

title = "A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC",

abstract = "We report the fastest (15 Gb/s) and lowest voltage (2.4V) all-silicon-based optical receiver to date. The receiver consists of a lateral, interdigitated, germanium-on-silicon-on-insulator (Ge-on-SOI) photodiode wire-bonded to a 0.13-μm complementary metal-oxide-semiconductor (CMOS) receiver integrated circuit (IC). The photodiode has an external quantum efficiency of 52% at λ = 850 nm and a dark current of 10 nA at - 2 V. The small-signal transimpedance of the receiver is 91-dB Ω and the bandwidth is 6.6 GHz. At a bit-error rate of 10-12 and λ = 850 nm the receiver exhibits sensitivities of - 11.0, - 9.6, and - 7.4 dBm at 12.5, 14, and 15 Gb/s, respectively. The receiver operates error-free at rates up to 10 Gb/s with an IC supply voltage as low as 1.5 V and with a photodiode bias as low as 0.5 V. The power consumption is 3 to 7 mW/Gb/s. The Ge-on-SOI photodiode is well suited for integration with CMOS processing, raising the possibility of producing high-performance, low-voltage, monolithically integrated receivers based on this technology in the future.",

keywords = "Complementary metal-oxide-semiconductor (CMOS) analog integrated circuits, Germanium (Ge), Optical receivers, Photodiodes, Silicon-on-insulator (SOI) technology",

author = "Schow, {C. L.} and L. Schares and Koester, {S. J.} and G. Dehlinger and R. John and Doany, {F. E.}",

note = "Funding Information: Manuscript received May 18, 2006. This work was supported in part by Defense Advanced Research Projects Agency (DARPA) under contract MDA972-03-3-0004. The authors are with Watson Research Center, IBM, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2006.880770",

year = "2006",

month = oct,

day = "1",

doi = "10.1109/LPT.2006.880770",

language = "English (US)",

volume = "18",

pages = "1981--1983",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

}

TY - JOUR

T1 - A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC

AU - Schow, C. L.

AU - Schares, L.

AU - Koester, S. J.

AU - Dehlinger, G.

AU - John, R.

AU - Doany, F. E.

N1 - Funding Information: Manuscript received May 18, 2006. This work was supported in part by Defense Advanced Research Projects Agency (DARPA) under contract MDA972-03-3-0004. The authors are with Watson Research Center, IBM, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2006.880770

PY - 2006/10/1

Y1 - 2006/10/1

N2 - We report the fastest (15 Gb/s) and lowest voltage (2.4V) all-silicon-based optical receiver to date. The receiver consists of a lateral, interdigitated, germanium-on-silicon-on-insulator (Ge-on-SOI) photodiode wire-bonded to a 0.13-μm complementary metal-oxide-semiconductor (CMOS) receiver integrated circuit (IC). The photodiode has an external quantum efficiency of 52% at λ = 850 nm and a dark current of 10 nA at - 2 V. The small-signal transimpedance of the receiver is 91-dB Ω and the bandwidth is 6.6 GHz. At a bit-error rate of 10-12 and λ = 850 nm the receiver exhibits sensitivities of - 11.0, - 9.6, and - 7.4 dBm at 12.5, 14, and 15 Gb/s, respectively. The receiver operates error-free at rates up to 10 Gb/s with an IC supply voltage as low as 1.5 V and with a photodiode bias as low as 0.5 V. The power consumption is 3 to 7 mW/Gb/s. The Ge-on-SOI photodiode is well suited for integration with CMOS processing, raising the possibility of producing high-performance, low-voltage, monolithically integrated receivers based on this technology in the future.

AB - We report the fastest (15 Gb/s) and lowest voltage (2.4V) all-silicon-based optical receiver to date. The receiver consists of a lateral, interdigitated, germanium-on-silicon-on-insulator (Ge-on-SOI) photodiode wire-bonded to a 0.13-μm complementary metal-oxide-semiconductor (CMOS) receiver integrated circuit (IC). The photodiode has an external quantum efficiency of 52% at λ = 850 nm and a dark current of 10 nA at - 2 V. The small-signal transimpedance of the receiver is 91-dB Ω and the bandwidth is 6.6 GHz. At a bit-error rate of 10-12 and λ = 850 nm the receiver exhibits sensitivities of - 11.0, - 9.6, and - 7.4 dBm at 12.5, 14, and 15 Gb/s, respectively. The receiver operates error-free at rates up to 10 Gb/s with an IC supply voltage as low as 1.5 V and with a photodiode bias as low as 0.5 V. The power consumption is 3 to 7 mW/Gb/s. The Ge-on-SOI photodiode is well suited for integration with CMOS processing, raising the possibility of producing high-performance, low-voltage, monolithically integrated receivers based on this technology in the future.

KW - Complementary metal-oxide-semiconductor (CMOS) analog integrated circuits

KW - Germanium (Ge)

KW - Optical receivers

KW - Photodiodes

KW - Silicon-on-insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=33749073423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749073423&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.880770

DO - 10.1109/LPT.2006.880770

M3 - Article

AN - SCOPUS:33749073423

SN - 1041-1135

VL - 18

SP - 1981

EP - 1983

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC

Abstract

Bibliographical note

Keywords

Publisher link

Find It

Other files and links

Fingerprint

Cite this