80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, M. J. Rooks, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

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Engineering & Materials Science