80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

S. J. Koester; K. L. Saenger; J. O. Chu; Q. C. Ouyang; J. A. Ott; M. J. Rooks; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

doi:10.1049/el:20031082

80 nm gate-length Si/Si_0.7Ge_0.3 n-MODFET with 194 GHz f_max

S. J. Koester
, K. L. Saenger
, J. O. Chu
, Q. C. Ouyang
, J. A. Ott
, M. J. Rooks
, D. F. Canaperi
, J. A. Tornello
, C. V. Jahnes
, S. E. Steen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed f_max = 194 GHz (175 GHz) and F_T = 70 GHz (79 GHz).

Original language	English (US)
Pages (from-to)	1684-1685
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	23
DOIs	https://doi.org/10.1049/el:20031082
State	Published - Nov 13 2003

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10.1049/el:20031082

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@article{c3188999a4c24508a67ccc3b39fc6521,

title = "80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax",

abstract = "DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).",

author = "Koester, \{S. J.\} and Saenger, \{K. L.\} and Chu, \{J. O.\} and Ouyang, \{Q. C.\} and Ott, \{J. A.\} and Rooks, \{M. J.\} and Canaperi, \{D. F.\} and Tornello, \{J. A.\} and Jahnes, \{C. V.\} and Steen, \{S. E.\}",

year = "2003",

month = nov,

day = "13",

doi = "10.1049/el:20031082",

language = "English (US)",

volume = "39",

pages = "1684--1685",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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}

TY - JOUR

T1 - 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

AU - Koester, S. J.

AU - Saenger, K. L.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Rooks, M. J.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2003/11/13

Y1 - 2003/11/13

N2 - DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).

AB - DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).

UR - https://www.scopus.com/pages/publications/0344549825

UR - https://www.scopus.com/pages/publications/0344549825#tab=citedBy

U2 - 10.1049/el:20031082

DO - 10.1049/el:20031082

M3 - Article

AN - SCOPUS:0344549825

SN - 0013-5194

VL - 39

SP - 1684

EP - 1685

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

80 nm gate-length Si/Si_0.7Ge_0.3 n-MODFET with 194 GHz f_max

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