80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, M. J. Rooks, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).

Original languageEnglish (US)
Pages (from-to)1684-1685
Number of pages2
JournalElectronics Letters
Volume39
Issue number23
DOIs
StatePublished - Nov 13 2003

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