80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

S. J. Koester; K. L. Saenger; J. O. Chu; Q. C. Ouyang; J. A. Ott; M. J. Rooks; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

doi:10.1049/el:20031082

80 nm gate-length Si/Si_0.7Ge_0.3 n-MODFET with 194 GHz f_max

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, M. J. Rooks, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed f_max = 194 GHz (175 GHz) and F_T = 70 GHz (79 GHz).

Original language	English (US)
Pages (from-to)	1684-1685
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	23
DOIs	https://doi.org/10.1049/el:20031082
State	Published - Nov 13 2003

Publisher link

10.1049/el:20031082

Find It

Find It at U of M Libraries

Cite this

@article{c3188999a4c24508a67ccc3b39fc6521,

title = "80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax",

abstract = "DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).",

author = "Koester, {S. J.} and Saenger, {K. L.} and Chu, {J. O.} and Ouyang, {Q. C.} and Ott, {J. A.} and Rooks, {M. J.} and Canaperi, {D. F.} and Tornello, {J. A.} and Jahnes, {C. V.} and Steen, {S. E.}",

year = "2003",

month = nov,

day = "13",

doi = "10.1049/el:20031082",

language = "English (US)",

volume = "39",

pages = "1684--1685",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "23",

}

TY - JOUR

T1 - 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

AU - Koester, S. J.

AU - Saenger, K. L.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Rooks, M. J.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2003/11/13

Y1 - 2003/11/13

N2 - DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).

AB - DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).

UR - http://www.scopus.com/inward/record.url?scp=0344549825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344549825&partnerID=8YFLogxK

U2 - 10.1049/el:20031082

DO - 10.1049/el:20031082

M3 - Article

AN - SCOPUS:0344549825

SN - 0013-5194

VL - 39

SP - 1684

EP - 1685

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

80 nm gate-length Si/Si_0.7Ge_0.3 n-MODFET with 194 GHz f_max

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this