4H-SiC n⁺pp⁺ structure passivated with a SIPOS-SiO₂ compound layer

Keyphrases

• Silica 100%
• 4H-SiC 100%
• Polysilicon 100%
• Compound Layer 100%
• Semi-insulating 100%
• Passivated 100%
• Passivation 40%
• Breakdown Voltage 20%
• Leakage Current 20%
• Annealing Temperature 20%
• Deposition Temperature 20%
• Silicon Layer 20%
• Oxide Layer 20%
• Excess Oxygen 20%
• Low Pressure Chemical Vapor Deposition (LPCVD) 20%
• Thermal Oxidation 20%
• Layer Deposition 20%
• Oxygen Atmosphere 20%
• Passivation Layer 20%
• SiO2 Layer 20%
• Technological Parameters 20%
• Voltage-current 20%
• Stepwise Annealing 20%

Engineering

• Compound Layer 100%
• Silicon Dioxide 100%
• Polysilicon 100%
• Passivation 40%
• Data Show 20%
• Thermal Oxidation 20%
• Deposition Temperature 20%
• Oxide Layer 20%
• Annealing Temperature 20%
• Silicon Layer 20%
• Sio2 Layer 20%
• Excess Oxygen 20%
• Breakdown Voltage 20%

Material Science

• Silicon 100%
• Oxidation Reaction 20%
• Low Pressure Chemical Vapor Deposition 20%
• Oxide Compound 20%