3D Phenomenological modeling of plasma-assisted ammonia reforming

Gihun Shim, Praise Noah Johnson, Taaresh Sanjeev Taneja, Suo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Plasma-assisted reforming of ammonia (NH3) offers a promising alternative to conventional thermal processes, leveraging the unique properties of plasma to enhance reaction rates and energy efficiency. Nanosecond repetitive pulse discharge (NRPD), characterized by high-voltage pulses of nanosecond duration at high repetition rates, generates non-equilibrium plasmas with high electron temperatures and relatively low gas temperatures. These discharges facilitate the partial dissociation of ammonia into hydrogen (H2) and reactive radicals such as NH2, NH, and H, significantly enhancing the efficiency and yield of hydrogen production. This study investigates the plasma-assisted reforming (PAFR) of NH3/N2 mixtures using detailed gas-phase and plasma reforming kinetics. 0D calculations are conducted to analyze the distribution of input pulse energy among various plasma-chemical processes, including ultra-fast gas heating and dissociation caused by the relaxation of electronic excitation modes, as well as slower gas heating resulting from the relaxation of vibrational excitation modes. A 3D phenomenological model is then employed to perform 3D direct numerical simulations (DNS) of ammonia reforming in a pin-to-pin electrode configuration with a 1 mm discharge gap. The impact of reduced electric fields (E/N) at 150 and 550 Td, with a constant pulse energy of 2 J, is examined to evaluate the formation and growth of reactants, products, and reactive radicals. Moreover, the formation of N2H3 and N2H4 is investigated, where N2H3 serves as a potential pathway for NO (nitric oxide) formation in NH3-air mixtures, and N2H4 is a toxic compound and a strong reductant produced during the reforming of NH3.

Original languageEnglish (US)
Title of host publicationAIAA Science and Technology Forum and Exposition, AIAA SciTech Forum 2025
PublisherAmerican Institute of Aeronautics and Astronautics Inc, AIAA
ISBN (Print)9781624107238
DOIs
StatePublished - 2025
EventAIAA Science and Technology Forum and Exposition, AIAA SciTech Forum 2025 - Orlando, United States
Duration: Jan 6 2025Jan 10 2025

Publication series

NameAIAA Science and Technology Forum and Exposition, AIAA SciTech Forum 2025

Conference

ConferenceAIAA Science and Technology Forum and Exposition, AIAA SciTech Forum 2025
Country/TerritoryUnited States
CityOrlando
Period1/6/251/10/25

Bibliographical note

Publisher Copyright:
© 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

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