2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors

Wei Xie, Xin Zhang, Chris Leighton, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

24 Scopus citations
Original languageEnglish (US)
Article number1600369
JournalAdvanced Electronic Materials
Volume3
Issue number3
DOIs
StatePublished - Mar 1 2017

Bibliographical note

Funding Information:
Work supported primarily by the National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC) at the University of Minnesota through DMR-1420013, with additional support from the Multi-University Research Initiative (MURI) program sponsored by the Office of Naval Research (MURI Award N00014-11-1-0690). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. The authors thank B. I. Shklovskii and K. Reich for enlightening discussions.

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 3

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