2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM

Pai Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


2D ferroelectric-gated field-effect transistors are promising for future non-volatile memory and low-power logic applications, to combine the advantage of both 2D semiconductors and ferroelectric insulators [1]-[3]. However, the non-ideal 2D semiconductor/3D insulator interface results in interface traps which degrade the device performance, variability and reliability. To integrate 2D semiconductor together with 2D ferroelectric insulator as 2D van der Waals heterostructure ferroelectric field-effect transistors (Fe-FETs) can eliminate the interface trap issue and achieve ideal insulator/semiconductor interface in principle. Copper indium thiophosphate (CuInP2S6, CIPS) is a novel two-dimensional (2D) ferroelectric material with layered single crystal structure and decent ambient stability [4]-[6]. Furthermore, it illustrates not only clear room temperature ferroelectric property with Curie point around 315 K, but also ferroelectric resistive switching characteristic.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

Bibliographical note

Publisher Copyright:
© 2018 IEEE.


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