1/f noise measurements of hydrogenated amorphous silicon-carbon alloys

H. M. Dyalsingh, G. M. Khera, James Kakalios, C. C. Tsai, R. A. Street

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Measurements of the optical, electronic and 1/f noise properties for a series of it-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
Pages631-636
Number of pages6
Volume336
StatePublished - Dec 1 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Other

Other1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

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    Dyalsingh, H. M., Khera, G. M., Kakalios, J., Tsai, C. C., & Street, R. A. (1994). 1/f noise measurements of hydrogenated amorphous silicon-carbon alloys. In Amorphous Silicon Technology - 1994 (Vol. 336, pp. 631-636)