1/f noise measurements of hydrogenated amorphous silicon-carbon alloys

H. M. Dyalsingh, G. M. Khera, J. Kakalios, C. C. Tsai, R. A. Street

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Measurements of the optical, electronic and 1/f noise properties for a series of it-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
PublisherMaterials Research Society
Pages631-636
Number of pages6
ISBN (Print)1558992367, 9781558992368
DOIs
StatePublished - 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Other

Other1994 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

Fingerprint

Dive into the research topics of '1/f noise measurements of hydrogenated amorphous silicon-carbon alloys'. Together they form a unique fingerprint.

Cite this