1/f noise characterization of n+-p and n-i-p Hg1-x CdxTe detectors

A. van der Ziel, Peng Fang, L. He, X. L. Wu, A. D. van Rheenen, P. H. Handel

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Abstract

1 /f noise in n+-p and n-i-p Hg1_xCdxTe photodiodes is discussed. The n+-p diodes have coherent-state 1/f noise or umklapp 1/f noise. The n-i-p diodes have much lower values for the Hooge parameter αH and their noise is probably due to generation-recombination-type (trapping) l/f noise.

Original languageEnglish (US)
Pages (from-to)550-554
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number2
DOIs
StatePublished - Jan 1 1989

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