1 /f noise in n+-p and n-i-p Hg1_xCdxTe photodiodes is discussed. The n+-p diodes have coherent-state 1/f noise or umklapp 1/f noise. The n-i-p diodes have much lower values for the Hooge parameter αH and their noise is probably due to generation-recombination-type (trapping) l/f noise.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Jan 1 1989|