1/f noise and thermal equilibration effects in hot wire deposited amorphous silicon

G. M. Khera, J. Kakalios, Q. Wang, E. Iwaniczko

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f and is dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

Original languageEnglish (US)
Pages (from-to)641-646
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume420
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

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