Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f and is dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1996|
|Event||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
Duration: Apr 8 1996 → Apr 12 1996