1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Siyuranga O. Koswatta, Steven J. Koester, Wilfried Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.

Original languageEnglish (US)
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - Dec 1 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Other

Other2009 International Electron Devices Meeting, IEDM 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

Fingerprint

Dive into the research topics of '1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing'. Together they form a unique fingerprint.

Cite this