We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.
|Original language||English (US)|
|Title of host publication||2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest|
|State||Published - Dec 1 2009|
|Event||2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States|
Duration: Dec 7 2009 → Dec 9 2009
|Other||2009 International Electron Devices Meeting, IEDM 2009|
|Period||12/7/09 → 12/9/09|