13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer

Jungwon Choi; Daisuke Tsukiyama; Yoshinori Tsuruda; Juan Rivas

doi:10.1109/WPT.2015.7140167

13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer

Jungwon Choi, Daisuke Tsukiyama, Yoshinori Tsuruda, Juan Rivas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

61 Scopus citations

Abstract

This paper presents a 1.3 kW resonant power amplifier using a Gallium Nitride (GaN) device at 13.56 MHz for wireless power transfer (WPT). The power amplifier driving the power transmitting coils is based on a Class Φ₂ inverter, a single switch topology with low switch voltage stress and fast transient response. This implementation utilizes a recently available GaN device in a low inductance package that is compatible with operation in the 10's of MHz switching frequency. These power GaN switching devices have low gate resistance RG and low capacitance C_GS which greatly reduces the power requirements of the gate drive circuitry. This paper shows experimental measurements of the inverter in a WPT application and characterization of the system performance over various distances and operating conditions.

Original language	English (US)
Title of host publication	2015 IEEE Wireless Power Transfer Conference, WPTC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467374477
DOIs	https://doi.org/10.1109/WPT.2015.7140167
State	Published - Jun 29 2015
Externally published	Yes
Event	2015 IEEE Wireless Power Transfer Conference, WPTC 2015 - Boulder, United States Duration: May 13 2015 → May 15 2015

Publication series

Name	2015 IEEE Wireless Power Transfer Conference, WPTC 2015

Conference

Conference	2015 IEEE Wireless Power Transfer Conference, WPTC 2015
Country/Territory	United States
City	Boulder
Period	5/13/15 → 5/15/15

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Publisher Copyright:
© 2015 IEEE.

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10.1109/WPT.2015.7140167

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13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer. / Choi, Jungwon; Tsukiyama, Daisuke; Tsuruda, Yoshinori et al.

2015 IEEE Wireless Power Transfer Conference, WPTC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7140167 (2015 IEEE Wireless Power Transfer Conference, WPTC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Choi, J, Tsukiyama, D, Tsuruda, Y & Rivas, J 2015, 13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer. in 2015 IEEE Wireless Power Transfer Conference, WPTC 2015., 7140167, 2015 IEEE Wireless Power Transfer Conference, WPTC 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE Wireless Power Transfer Conference, WPTC 2015, Boulder, United States, 5/13/15. https://doi.org/10.1109/WPT.2015.7140167

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abstract = "This paper presents a 1.3 kW resonant power amplifier using a Gallium Nitride (GaN) device at 13.56 MHz for wireless power transfer (WPT). The power amplifier driving the power transmitting coils is based on a Class Φ2 inverter, a single switch topology with low switch voltage stress and fast transient response. This implementation utilizes a recently available GaN device in a low inductance package that is compatible with operation in the 10's of MHz switching frequency. These power GaN switching devices have low gate resistance RG and low capacitance CGS which greatly reduces the power requirements of the gate drive circuitry. This paper shows experimental measurements of the inverter in a WPT application and characterization of the system performance over various distances and operating conditions.",

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N2 - This paper presents a 1.3 kW resonant power amplifier using a Gallium Nitride (GaN) device at 13.56 MHz for wireless power transfer (WPT). The power amplifier driving the power transmitting coils is based on a Class Φ2 inverter, a single switch topology with low switch voltage stress and fast transient response. This implementation utilizes a recently available GaN device in a low inductance package that is compatible with operation in the 10's of MHz switching frequency. These power GaN switching devices have low gate resistance RG and low capacitance CGS which greatly reduces the power requirements of the gate drive circuitry. This paper shows experimental measurements of the inverter in a WPT application and characterization of the system performance over various distances and operating conditions.

AB - This paper presents a 1.3 kW resonant power amplifier using a Gallium Nitride (GaN) device at 13.56 MHz for wireless power transfer (WPT). The power amplifier driving the power transmitting coils is based on a Class Φ2 inverter, a single switch topology with low switch voltage stress and fast transient response. This implementation utilizes a recently available GaN device in a low inductance package that is compatible with operation in the 10's of MHz switching frequency. These power GaN switching devices have low gate resistance RG and low capacitance CGS which greatly reduces the power requirements of the gate drive circuitry. This paper shows experimental measurements of the inverter in a WPT application and characterization of the system performance over various distances and operating conditions.

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13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer

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