110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration

Yali Zhang; Joseph Um; Nikita Mahjabeen; Bethanie Stadler; Rashaunda Henderson; Rhonda Franklin

doi:10.1109/IMS37962.2022.9865449

110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration

Yali Zhang, Joseph Um, Nikita Mahjabeen, Bethanie Stadler, Rashaunda Henderson, Rhonda Franklin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A study of integrated copper nanowire via technology in coplanar waveguide circuit on 1.2 μm thick integrated anodized aluminum oxide is presented. The integrated nanowire vias operate up to 67 GHz and are compared to conventional copper vias. Compared to conventional via, nanowire via shows lower loss up to 45 GHz. Next, the via dimension effect is studied up to 110 GHz. The results indicate that wide via widths and short via lengths provides low loss via. At 40 and 60 GHz, the extracted single via loss is observed to be 0.0975 dB and 0.149 dB, respectively. Compared to the other technology, the via in this work is very short (1.2 um) and therefore has lower loss.

Original language	English (US)
Title of host publication	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	587-590
Number of pages	4
ISBN (Electronic)	9781665496131
DOIs	https://doi.org/10.1109/IMS37962.2022.9865449
State	Published - 2022
Event	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 - Denver, United States Duration: Jun 19 2022 → Jun 24 2022

Publication series

Name	2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

Conference

Conference	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Country/Territory	United States
City	Denver
Period	6/19/22 → 6/24/22

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported in part by ARFTG Roger Pollard fellowship, Semiconductor Research Corporation (SRC) and the National Science Foundation (NSF) Award (CMMI-01762884) with portions conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award Number ECCS-2025124.

Publisher Copyright:
© 2022 IEEE.

Keywords

3D Si integration
Integrated circuit
millimeter-wave technology
nanowires

Publisher link

10.1109/IMS37962.2022.9865449

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Cite this

Zhang, Y., Um, J., Mahjabeen, N., Stadler, B., Henderson, R., & Franklin, R. (2022). 110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration. In 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 (pp. 587-590). (2022 IEEE/MTT-S International Microwave Symposium - IMS 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS37962.2022.9865449

110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration. / Zhang, Yali; Um, Joseph; Mahjabeen, Nikita et al.
2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 587-590 (2022 IEEE/MTT-S International Microwave Symposium - IMS 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, Y, Um, J, Mahjabeen, N, Stadler, B, Henderson, R & Franklin, R 2022, 110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration. in 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Institute of Electrical and Electronics Engineers Inc., pp. 587-590, 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Denver, United States, 6/19/22. https://doi.org/10.1109/IMS37962.2022.9865449

Zhang Y, Um J, Mahjabeen N, Stadler B, Henderson R, Franklin R. 110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration. In 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 587-590. (2022 IEEE/MTT-S International Microwave Symposium - IMS 2022). doi: 10.1109/IMS37962.2022.9865449

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title = "110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration",

abstract = "A study of integrated copper nanowire via technology in coplanar waveguide circuit on 1.2 μm thick integrated anodized aluminum oxide is presented. The integrated nanowire vias operate up to 67 GHz and are compared to conventional copper vias. Compared to conventional via, nanowire via shows lower loss up to 45 GHz. Next, the via dimension effect is studied up to 110 GHz. The results indicate that wide via widths and short via lengths provides low loss via. At 40 and 60 GHz, the extracted single via loss is observed to be 0.0975 dB and 0.149 dB, respectively. Compared to the other technology, the via in this work is very short (1.2 um) and therefore has lower loss.",

keywords = "3D Si integration, Integrated circuit, millimeter-wave technology, nanowires",

author = "Yali Zhang and Joseph Um and Nikita Mahjabeen and Bethanie Stadler and Rashaunda Henderson and Rhonda Franklin",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by ARFTG Roger Pollard fellowship, Semiconductor Research Corporation (SRC) and the National Science Foundation (NSF) Award (CMMI-01762884) with portions conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award Number ECCS-2025124. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 ; Conference date: 19-06-2022 Through 24-06-2022",

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doi = "10.1109/IMS37962.2022.9865449",

language = "English (US)",

series = "2022 IEEE/MTT-S International Microwave Symposium - IMS 2022",

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AU - Zhang, Yali

AU - Um, Joseph

AU - Mahjabeen, Nikita

AU - Stadler, Bethanie

AU - Henderson, Rashaunda

AU - Franklin, Rhonda

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by ARFTG Roger Pollard fellowship, Semiconductor Research Corporation (SRC) and the National Science Foundation (NSF) Award (CMMI-01762884) with portions conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award Number ECCS-2025124. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - A study of integrated copper nanowire via technology in coplanar waveguide circuit on 1.2 μm thick integrated anodized aluminum oxide is presented. The integrated nanowire vias operate up to 67 GHz and are compared to conventional copper vias. Compared to conventional via, nanowire via shows lower loss up to 45 GHz. Next, the via dimension effect is studied up to 110 GHz. The results indicate that wide via widths and short via lengths provides low loss via. At 40 and 60 GHz, the extracted single via loss is observed to be 0.0975 dB and 0.149 dB, respectively. Compared to the other technology, the via in this work is very short (1.2 um) and therefore has lower loss.

AB - A study of integrated copper nanowire via technology in coplanar waveguide circuit on 1.2 μm thick integrated anodized aluminum oxide is presented. The integrated nanowire vias operate up to 67 GHz and are compared to conventional copper vias. Compared to conventional via, nanowire via shows lower loss up to 45 GHz. Next, the via dimension effect is studied up to 110 GHz. The results indicate that wide via widths and short via lengths provides low loss via. At 40 and 60 GHz, the extracted single via loss is observed to be 0.0975 dB and 0.149 dB, respectively. Compared to the other technology, the via in this work is very short (1.2 um) and therefore has lower loss.

KW - 3D Si integration

KW - Integrated circuit

KW - millimeter-wave technology

KW - nanowires

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110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration

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