A study of integrated copper nanowire via technology in coplanar waveguide circuit on 1.2 μm thick integrated anodized aluminum oxide is presented. The integrated nanowire vias operate up to 67 GHz and are compared to conventional copper vias. Compared to conventional via, nanowire via shows lower loss up to 45 GHz. Next, the via dimension effect is studied up to 110 GHz. The results indicate that wide via widths and short via lengths provides low loss via. At 40 and 60 GHz, the extracted single via loss is observed to be 0.0975 dB and 0.149 dB, respectively. Compared to the other technology, the via in this work is very short (1.2 um) and therefore has lower loss.
|Original language||English (US)|
|Title of host publication||2022 IEEE/MTT-S International Microwave Symposium, IMS 2022|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|State||Published - 2022|
|Event||2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 - Denver, United States|
Duration: Jun 19 2022 → Jun 24 2022
|Name||2022 IEEE/MTT-S International Microwave Symposium - IMS 2022|
|Conference||2022 IEEE/MTT-S International Microwave Symposium, IMS 2022|
|Period||6/19/22 → 6/24/22|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported in part by ARFTG Roger Pollard fellowship, Semiconductor Research Corporation (SRC) and the National Science Foundation (NSF) Award (CMMI-01762884) with portions conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award Number ECCS-2025124.
© 2022 IEEE.
- 3D Si integration
- Integrated circuit
- millimeter-wave technology