1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

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Abstract

Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages1038-1039
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 6 1998Dec 9 1998

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period12/6/9812/9/98

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    He, B., Ma, T., Campbell, S. A., & Gladfelter, W. L. (1998). 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 1038-1039). IEEE.