1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

55 Citations (Scopus)

Abstract

Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages1038-1039
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 6 1998Dec 9 1998

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period12/6/9812/9/98

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Titanium
Silicon
Oxides
Metallorganic chemical vapor deposition
Transistors
Pyrolysis
Capacitance
Deposits
Decomposition
Hydrogen
Carbon

Cite this

He, B., Ma, T., Campbell, S. A., & Gladfelter, W. L. (1998). 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 1038-1039). IEEE.

1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. / He, B.; Ma, T.; Campbell, S. A.; Gladfelter, W. L.

Technical Digest - International Electron Devices Meeting. ed. / Anon. IEEE, 1998. p. 1038-1039.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

He, B, Ma, T, Campbell, SA & Gladfelter, WL 1998, 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. in Anon (ed.), Technical Digest - International Electron Devices Meeting. IEEE, pp. 1038-1039, Proceedings of the 1998 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 12/6/98.
He B, Ma T, Campbell SA, Gladfelter WL. 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. In Anon, editor, Technical Digest - International Electron Devices Meeting. IEEE. 1998. p. 1038-1039
He, B. ; Ma, T. ; Campbell, S. A. ; Gladfelter, W. L. / 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon. Technical Digest - International Electron Devices Meeting. editor / Anon. IEEE, 1998. pp. 1038-1039
@inproceedings{ac1991acf7e24c84bcd4ce9d52099ba8,
title = "1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon",
abstract = "Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.",
author = "B. He and T. Ma and Campbell, {S. A.} and Gladfelter, {W. L.}",
year = "1998",
language = "English (US)",
pages = "1038--1039",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",

}

TY - GEN

T1 - 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

AU - He, B.

AU - Ma, T.

AU - Campbell, S. A.

AU - Gladfelter, W. L.

PY - 1998

Y1 - 1998

N2 - Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

AB - Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

UR - http://www.scopus.com/inward/record.url?scp=0032279435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032279435&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032279435

SP - 1038

EP - 1039

BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - IEEE

ER -