1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

B. He; T. Ma; S. A. Campbell; W. L. Gladfelter

1.1 nm oxide equivalent gate insulator formed using TiO₂ on nitrided silicon

B. He, T. Ma, S. A. Campbell, W. L. Gladfelter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tunneling leakage limits the scaling of SiO₂ to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO₂ using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O₂ anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO₃)₄ or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO₂ layers on silicon that is thermally nitrided at 850 °C in NH₃ at 10 torr.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting
Editors	Anon
Publisher	IEEE
Pages	1038-1039
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 6 1998 → Dec 9 1998

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Other	Proceedings of the 1998 IEEE International Electron Devices Meeting
City	San Francisco, CA, USA
Period	12/6/98 → 12/9/98

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@inproceedings{ac1991acf7e24c84bcd4ce9d52099ba8,

title = "1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon",

abstract = "Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.",

author = "B. He and T. Ma and Campbell, {S. A.} and Gladfelter, {W. L.}",

year = "1998",

language = "English (US)",

pages = "1038--1039",

editor = "Anon",

booktitle = "Technical Digest - International Electron Devices Meeting",

publisher = "IEEE",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - GEN

T1 - 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon

AU - He, B.

AU - Ma, T.

AU - Campbell, S. A.

AU - Gladfelter, W. L.

PY - 1998

Y1 - 1998

N2 - Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

AB - Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.

UR - http://www.scopus.com/inward/record.url?scp=0032279435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032279435&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032279435

SP - 1038

EP - 1039

BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - IEEE

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

1.1 nm oxide equivalent gate insulator formed using TiO₂ on nitrided silicon

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