1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD

S. J. Koester, B. U. Klepser, J. O. Chu, D. Kuchta, K. Ismail

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages60-61
Number of pages2
StatePublished - Dec 1 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period6/22/986/24/98

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    Koester, S. J., Klepser, B. U., Chu, J. O., Kuchta, D., & Ismail, K. (1998). 1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD. In Annual Device Research Conference Digest (pp. 60-61). IEEE.