1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD

S. J. Koester; B. U. Klepser; J. O. Chu; D. Kuchta; K. Ismail

1.1 GHz MSM photodiodes on relaxed Si_1-xGe_x grown by UHV-CVD

S. J. Koester, B. U. Klepser, J. O. Chu, D. Kuchta, K. Ismail

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si_0.75Ge_0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.

Original language	English (US)
Title of host publication	Annual Device Research Conference Digest
Publisher	IEEE
Pages	60-61
Number of pages	2
State	Published - Dec 1 1998
Event	Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998

Other

Other	Proceedings of the 1998 56th Annual Device Research Conference
City	Charlottesville, VA, USA
Period	6/22/98 → 6/24/98

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@inproceedings{6f349e1433494c73a1c5975d64049ada,

title = "1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD",

abstract = "Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.",

author = "Koester, {S. J.} and Klepser, {B. U.} and Chu, {J. O.} and D. Kuchta and K. Ismail",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "60--61",

booktitle = "Annual Device Research Conference Digest",

publisher = "IEEE",

note = "Proceedings of the 1998 56th Annual Device Research Conference ; Conference date: 22-06-1998 Through 24-06-1998",

}

TY - GEN

T1 - 1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD

AU - Koester, S. J.

AU - Klepser, B. U.

AU - Chu, J. O.

AU - Kuchta, D.

AU - Ismail, K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.

AB - Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032308140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032308140&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032308140

SP - 60

EP - 61

BT - Annual Device Research Conference Digest

PB - IEEE

T2 - Proceedings of the 1998 56th Annual Device Research Conference

Y2 - 22 June 1998 through 24 June 1998

ER -

1.1 GHz MSM photodiodes on relaxed Si_1-xGe_x grown by UHV-CVD

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