Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.
|Original language||English (US)|
|Title of host publication||1992 International Technical Digest on Electron Devices Meeting, IEDM 1992|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|State||Published - 1992|
|Event||1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States|
Duration: Dec 13 1992 → Dec 16 1992
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||1992 International Technical Digest on Electron Devices Meeting, IEDM 1992|
|Period||12/13/92 → 12/16/92|
Bibliographical noteFunding Information:
This work has been supported in part by Wright Laboratory - Contract No. F33615-88-C-1763.
© 1992 IEEE.