0.7 micron gate length complementary Al0.75Ga0.25As/In0.25Ga0.75As/GaAs HIGFET technology for high speed/low power digital circuits

D. E. Grider, P. P. Ruden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, R. H. Tran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.

Original languageEnglish (US)
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages331-334
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: Dec 13 1992Dec 16 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/TerritoryUnited States
CitySan Francisco
Period12/13/9212/16/92

Bibliographical note

Funding Information:
This work has been supported in part by Wright Laboratory - Contract No. F33615-88-C-1763.

Publisher Copyright:
© 1992 IEEE.

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