β-(Al _xGa_{1- x} )₂O₃/Ga₂O₃heterostructure Schottky diodes for improved v _BR²/ R _ON

Keyphrases

• Schottky Diode 100%
• Capping Layer 100%
• Breakdown Voltage 66%
• Ga2O3 66%
• (AlxGa1-x)2O3 66%
• Barrier Height 33%
• Fermi Level pinning 33%
• Diode 33%
• Schottky Barrier 33%
• Wide Band Gap Semiconductors 33%
• Heterojunction 33%
• Carrier Injection 33%
• Level of Functioning 33%
• Reverse Bias 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Pt Contacts 33%
• Metal Work Function 33%
• Cm(III) 33%
• Peak Electric Field 33%
• Semiconductor Diodes 33%
• Reverse Leakage Current 33%
• On-state Resistance 33%
• Bipolar Doping 33%

Engineering

• Capping Layer 100%
• Breakdown Voltage 66%
• Good Agreement 33%
• Schottky Barrier 33%
• Barrier Height 33%
• Reverse Bias 33%
• Metal Organic Chemical Vapor Deposition 33%
• Figure of Merit 33%
• Heterojunctions 33%
• Electric Field 33%
• Band Gap 33%
• Fermi Level 33%

Material Science

• Schottky Diode 100%
• Heterojunction 50%
• Schottky Barrier 50%
• Metal-Organic Chemical Vapor Deposition 50%
• Surface (Surface Science) 50%