• 421 Washington Ave SE, 435 Amundson Hall

    55455 Minneapolis

    United States

20032021
If you made any changes in Pure, your changes will be visible here soon.

Research Output 2003 2019

2011
6 Citations (Scopus)

Connectivity of edge and surface states in topological insulators

Jiang, Y., Lu, F., Zhai, F., Low, T. & Hu, J., Nov 18 2011, In : Physical Review B - Condensed Matter and Materials Physics. 84, 20, 205324.

Research output: Contribution to journalArticle

Surface states
insulators
Scattering
theorems
Metals
86 Citations (Scopus)

Gaps tunable by electrostatic gates in strained graphene

Low, T., Guinea, F. & Katsnelson, M. I., May 26 2011, In : Physical Review B - Condensed Matter and Materials Physics. 83, 19, 195436.

Research output: Contribution to journalArticle

Graphite
Graphene
superlattices
Electrostatics
graphene
147 Citations (Scopus)

Gate-controlled guiding of electrons in graphene

Williams, J. R., Low, T., Lundstrom, M. S. & Marcus, C. M., Jan 1 2011, In : Nature Nanotechnology. 6, 4, p. 222-225 4 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Fiber optics
fiber optics

Nano CMOS device quantum simulation: Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Low, T., Li, M. F., Shen, C., Yeo, Y. C., Hou, Y. T., Zhu, C., Chin, A. & Kwong, D. L., Jan 1 2011, Selected Semiconductor Research. Imperial College Press, p. 438-440 3 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Electron mobility
MOSFET devices
Quantum confinement
Germanium
33 Citations (Scopus)

Scaling of the energy gap in pattern-hydrogenated graphene

Grassi, R., Low, T. & Lundstrom, M., Nov 9 2011, In : Nano Letters. 11, 11, p. 4574-4578 5 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Energy gap
scaling
25 Citations (Scopus)

Signatures of disorder in the minimum conductivity of graphene

Sui, Y., Low, T., Lundstrom, M. & Appenzeller, J., Mar 9 2011, In : Nano Letters. 11, 3, p. 1319-1322 4 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
signatures
disorders
39 Citations (Scopus)

Substrate gating of contact resistance in graphene transistors

Berdebes, D., Low, T., Sui, Y., Appenzeller, J. & Lundstrom, M. S., Nov 1 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3925-3932 8 p., 6004826.

Research output: Contribution to journalArticle

Graphite
Contact resistance
Graphene
Metals
Substrates
2010

All-graphene electronics by exploiting physical analogies

Low, T., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1231-1234 4 p. 5667614

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphene
Electronic equipment
Integrated circuits
Optics
Refractive index
41 Citations (Scopus)

Band structure and gaps of triangular graphene superlattices

Guinea, F. & Low, T., Dec 13 2010, In : Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences. 368, 1932, p. 5391-5402 12 p.

Research output: Contribution to journalReview article

Magnetic thin films
Superlattices
Graphene
Band Structure
Band Gap
1 Citation (Scopus)

Electronic transport properties of graphene pn junction and its electron optics

Low, T. & Lundstrom, M. S., Dec 29 2010, Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2. 5 ed. p. 45-48 4 p. (ECS Transactions; vol. 28, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron optics
Transport properties
Graphene
Green's function
Refractive index
7 Citations (Scopus)

Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Gao, Y., Low, T., Lundstrom, M. S. & Nikonov, D. E., Oct 15 2010, In : Journal of Applied Physics. 108, 8, 083702.

Research output: Contribution to journalArticle

field effect transistors
simulation
scattering
simulators
insertion
160 Citations (Scopus)

Strain-induced pseudomagnetic field for novel graphene electronics

Low, T. & Guinea, F., Sep 8 2010, In : Nano Letters. 10, 9, p. 3551-3554 4 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Electronic equipment
valleys
2009
24 Citations (Scopus)
Graphite
Ballistics
p-n junctions
Graphene
ballistics
99 Citations (Scopus)

Conductance asymmetry of graphene p-n junction

Low, T., Hong, S., Appenzeller, J., Datta, S. & Lundstrom, M. S., Apr 30 2009, In : IEEE Transactions on Electron Devices. 56, 6, p. 1292-1299 8 p.

Research output: Contribution to journalArticle

Graphite
Graphene
Ballistics
Wave functions
Charge density
37 Citations (Scopus)

Electronic transport properties of a tilted graphene p-n junction

Low, T. & Appenzeller, J., Oct 6 2009, In : Physical Review B - Condensed Matter and Materials Physics. 80, 15, 155406.

Research output: Contribution to journalArticle

Graphite
p-n junctions
Transport properties
Graphene
graphene
9 Citations (Scopus)

Possibilities for VDD = 0.1V logic using carbon-based tunneling field effect transistors

Gao, Y., Low, T. & Lundstrom, M., Nov 16 2009, 2009 Symposium on VLSI Technology, VLSIT 2009. p. 180-181 2 p. 5200680

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Carbon
Wave functions
Green's function
Networks (circuits)
3 Citations (Scopus)

Real space first-principles derived semiempirical pseudopotentials applied to tunneling magnetoresistance

Bevan, K. H., Low, T. & Guo, H., Jun 22 2009, In : Journal of Applied Physics. 105, 9, 093709.

Research output: Contribution to journalArticle

pseudopotentials
space density
magnesium oxides
ghosts
parameterization
2008
37 Citations (Scopus)

A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs

Liu, Y., Neophytou, N., Low, T., Klimeck, G. & Lundstrom, M. S., Mar 1 2008, In : IEEE Transactions on Electron Devices. 55, 3, p. 866-871 6 p.

Research output: Contribution to journalArticle

Ballistics
Field effect transistors
Band structure
7 Citations (Scopus)

Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green's function approach with spin relaxation

Low, T., Lundstrom, M. S. & Nikonov, D. E., Nov 24 2008, In : Journal of Applied Physics. 104, 9, 094511.

Research output: Contribution to journalArticle

metal oxide semiconductors
Green's functions
field effect transistors
minorities
magnetization
13 Citations (Scopus)

NEGF analysis of InGaAs schottky barrier double gate MOSFETs

Pal, H. S., Low, T. & Lundstrom, M. S., Dec 1 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796843

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transconductance
Field effect transistors
Mass transfer
field effect transistors
transconductance
7 Citations (Scopus)

Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance

Zhu, Z. G., Low, T., Li, M. F., Fan, W. J., Bai, P., Kwong, D. L. & Samudra, G., Feb 1 2008, In : Semiconductor Science and Technology. 23, 2, 025009.

Research output: Contribution to journalArticle

Ultrathin films
metal oxide semiconductors
Band structure
valleys
Transistors
3 Citations (Scopus)
signatures
Surveying
Green's function
Surface morphology
Mass transfer
2007
31 Citations (Scopus)

Performance analysis of III-V materials in a double-gate nano-MOSFET

Cantley, K. D., Liu, Y., Pal, H. S., Low, T., Ahmed, S. S. & Lundstrom, M. S., Dec 1 2007, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 113-116 4 p., 4418877.

Research output: Contribution to journalConference article

Silicon
Ballistics
field effect transistors
ballistics
thin bodies
2006

Modeling study of InSb thin film for advanced III-V MOSFET applications

Zhu, Z. G., Low, T., Li, M. F., Fan, W. J., Bai, P., Kwong, D. L. & Samudra, G., Dec 1 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154337. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

valleys
field effect transistors
Thin films
Film thickness
thin films
2005
2 Citations (Scopus)

First principle study of Si and Ge band structure for UTB MOSFETs applications

Low, T., Feng, Y. P., Li, M. F., Samudra, G., Yeo, Y. C., Bai, P., Chan, L. & Kwong, D. L., Dec 1 2005, 2005 International Semiconductor Device Research Symposium. p. 358-359 2 p. 1596134. (2005 International Semiconductor Device Research Symposium; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Band structure
Film thickness
Thin films
Electrons
32 Citations (Scopus)

Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs

Low, T., Li, M. F., Samudra, G., Yeo, Y. C., Zhu, C., Chin, A. & Kwong, D. L., Nov 1 2005, In : IEEE Transactions on Electron Devices. 52, 11, p. 2430-2439 10 p.

Research output: Contribution to journalArticle

Germanium
Silicon
Surface roughness
Hole mobility
Threshold voltage
12 Citations (Scopus)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

Low, T., Li, M. F., Yeo, Y. C., Fan, W. J., Ng, S. T. & Kwong, D. L., Jul 15 2005, In : Journal of Applied Physics. 98, 2, 024504.

Research output: Contribution to journalArticle

metal oxide semiconductors
germanium
field effect transistors
valence
silicon
2004
26 Citations (Scopus)

Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Low, T., Li, M. F., Shen, C., Yeo, Y. C., Hou, Y. T., Zhu, C., Chin, A. & Kwong, D. L., Sep 20 2004, In : Applied Physics Letters. 85, 12, p. 2402-2404 3 p.

Research output: Contribution to journalArticle

electron mobility
metal oxides
field effect transistors
conductors
metal oxide semiconductors
5 Citations (Scopus)

Impact of metal gate work function on nano CMOS device performance

Hou, Y. T., Low, T., Xu, B., Li, M. F., Samudra, G. & Kwong, D. L., Dec 1 2004, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004. Huang, R., Yu, M., Liou, J. J., Hiramito, T. & Claeys, C. (eds.). Vol. 1. p. 57-60 4 p. A1.8

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metals
Field effect transistors
Crystal orientation
Transistors
31 Citations (Scopus)

Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs

Low, T., Li, M. F., Fan, W. J., Ng, S. T., Yeo, Y. C., Zhu, C., Chin, A., Chan, L. & Kwong, D. L., Dec 1 2004, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 151-154 4 p.

Research output: Contribution to journalConference article

thin bodies
Germanium
Silicon
germanium
surface roughness
36 Citations (Scopus)

Metal gate work function engineering on gate leakage of MOSFETs

Hou, Y. T., Li, M. F., Low, T. & Kwong, D. L., Nov 1 2004, In : IEEE Transactions on Electron Devices. 51, 11, p. 1783-1789 7 p.

Research output: Contribution to journalArticle

leakage
field effect transistors
Metals
engineering
Field effect transistors
2003
15 Citations (Scopus)

Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current

Low, T., Hou, Y. T., Li, M. F., Zhu, C., Kwong, D. L. & Chin, A., Oct 1 2003, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 117-118 2 p.

Research output: Contribution to journalArticle

Germanium
Gate dielectrics
Electrons
Carrier mobility
Capacitance
4 Citations (Scopus)

Impact of metal gate work function on gate leakage of MOSFETs

Hou, Y. T., Li, M. F., Low, T. & Kwong, D. L., Jan 1 2003, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 154-155 2 p. 1272039. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metals
Polysilicon
Leakage currents
Boron
11 Citations (Scopus)

Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET

Low, T., Hou, Y. T. & Li, M. F., May 1 2003, In : IEEE Transactions on Electron Devices. 50, 5, p. 1284-1289 6 p.

Research output: Contribution to journalArticle

Electrostatics
field effect transistors
Inversion layers
approximation
electrostatics
45 Citations (Scopus)

Investigation of Performance Limits of Germanium Double-Gated MOSFETs

Low, T., Hou, Y. T., Li, M. F., Zhu, C., Chin, A., Samudra, G., Chan, L. & Kwong, D. L., Dec 1 2003, In : Technical Digest - International Electron Devices Meeting. p. 691-694 4 p.

Research output: Contribution to journalConference article

Germanium
thin bodies
germanium
field effect transistors
Electric potential