1986 …2013

Research output per year

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Research Output

  • 21 Article
  • 6 Conference article
  • 5 Conference contribution
2013

1.2V constant-gm rail-to-rail CMOS Op-Amp input stage with new overlapped transition regions technique for ECG amplifier

Lee, B. & Higman, T., 2013, Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS. Vol. 2013. p. 3451-3454 4 p. 6610284. (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

1V rail-to-rail constant Gm amplifier with common-mode elimination technique

Lee, B. & Higman, T., Sep 9 2013, 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013. p. 385-388 4 p. 6571861. (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations
2012

A 1.2v comparator for low power adc biomedical application

Hu, C. L. & Higman, T. K., Mar 2012, In : Journal of Medical Devices, Transactions of the ASME. 6, 1, p. 1 1 p.

Research output: Contribution to journalArticle

2011

Extremely simple constant-gm technique for low voltage rail-to-rail amplifier input stage

Lee, B. & Higman, T., Dec 1 2011, 2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011. p. 314-317 4 p. 6122276. (2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
2004

Properties of high-k/ultrahigh purity silicon nitride stacks

Shi, X., Shriver, M., Zhang, Z., Higman, T. & Campbell, S. A., Jul 1 2004, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 4, p. 1146-1151 6 p.

Research output: Contribution to journalArticle

22 Scopus citations
2001
2 Scopus citations

High permittivity oxide gate stacks on silicon incorporating UHV silicon nitride interfacial layers

Shriver, M. A., Gabrys, A. M., Higman, T. K. & Campbell, S. A., 2001, Materials Research Society Symposium - Proceedings. Campbell, S. A., Clevenger, L. A., Griffin, P. B. & Hobbs, C. C. (eds.). Vol. 670.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Low-oxygen nitride layers produced by UHV ammonia nitridation of silicon

Shriver, M. A., Higman, T. K., Campbell, S. A., Taylor, C. J. & Roberts, J., 2001, Materials Research Society Symposium - Proceedings. Clenvenger, L. A., Campbell, S. A., Besser, P. R., Herner, S. B. & Kittl, J. (eds.). Vol. 611.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
1997

Real-time control of etching processes: Experimental results

Berg, J., Higman, T. K. & Tannenbaum, A. R., Dec 1 1997, In : Proceedings of SPIE - The International Society for Optical Engineering. 3213, p. 249-260 12 p.

Research output: Contribution to journalConference article

1 Scopus citations
1996

Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography

Hagedorn, M. S., Litfin, D. D., Price, G. M., Gordon, A. E. & Higman, T. K., Nov 1 1996, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14, 6, p. 4153-4156 4 p.

Research output: Contribution to journalArticle

8 Scopus citations
1995

Atomic force microscope-based lithography of titanium

Gordon, A. E., Litfin, D. D., Hagedorn, M. S., Chen, J., Fayfield, R. T. & Higman, T. K., Dec 1 1995, In : Materials Research Society Symposium - Proceedings. 380, p. 125-130 6 p.

Research output: Contribution to journalConference article

8 Scopus citations

Low-pressure plasma deposition of photosensitive organosilicon polymers

Hagedorn, M. S., Higman, T. K., Fayfield, R. T. & Chen, J., May 1 1995, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13, 3, p. 862-864 3 p.

Research output: Contribution to journalArticle

Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal-insulator-semiconductor field-effect transistors

Fayfield, R. T., Chen, J., Hagedorn, M. S., Higman, T. K., Moy, A. M. & Cheng, K. Y., Mar 1 1995, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13, 2, p. 786-788 3 p.

Research output: Contribution to journalConference article

1 Scopus citations
1993

Real-space transfer by hot electron resonant tunneling

Higman, T. K., Chen, J., Hagedorn, M. S. & Williamson, F., Jun 1993, In : Superlattices and Microstructures. 13, 4, p. 397-400 4 p.

Research output: Contribution to journalArticle

Scanning tunneling microscope-based nanolithography for electronic device fabrication

Lyding, J. W., Brockenbrough, R. T., Fay, P. J., Tucker, J. R., Hess, K. & Higman, T. K., Oct 3 1993, In : Proceedings of SPIE - The International Society for Optical Engineering. 10310, p. 111-126 16 p., 1031008.

Research output: Contribution to journalConference article

1 Scopus citations
1992

Observation of light emission from real-space transfer devices

Higman, T. K., Hagedorn, M. S., Chen, J. & Cheng, K. Y., Dec 1 1992, In : Applied Physics Letters. 60, 11, p. 1342-1344 3 p.

Research output: Contribution to journalArticle

14 Scopus citations
1989

Dynamics of heterostructure hot-electron diodes

Arnold, D., Hess, K., Higman, T., Coleman, J. J. & Iafrate, G. J., Dec 1 1989, In : Journal of Applied Physics. 66, 3, p. 1423-1427 5 p.

Research output: Contribution to journalArticle

12 Scopus citations

Observation of apparent inelastic tunneling between Landau levels in superlattices

Higman, T. K., Favaro, M. E., Miller, L. M., Emanuel, M. A. & Coleman, J. J., Dec 1 1989, In : Applied Physics Letters. 54, 18, p. 1751-1753 3 p.

Research output: Contribution to journalArticle

4 Scopus citations

Strained layer InGaAs channel negative-resistance field-effect transistor

Favaro, M. E., Fernández, G. E., Higman, T. K., York, P. K., Miller, L. M. & Coleman, J. J., Dec 1 1989, In : Journal of Applied Physics. 65, 1, p. 378-380 3 p.

Research output: Contribution to journalArticle

20 Scopus citations
1988

Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices

Kizilyalli, I. C., Hess, K., Higman, T., Emanuel, M. & Coleman, J. J., Jan 1 1988, In : Solid State Electronics. 31, 3-4, p. 355-357 3 p.

Research output: Contribution to journalArticle

8 Scopus citations

Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

Kolodzey, J., Laskar, J., Higman, T. K., Emanuel, M. A., Coleman, J. J. & Hess, K., 1988, In : IEEE Electron Device Letters. 9, 6, p. 272-274 3 p.

Research output: Contribution to journalArticle

8 Scopus citations

Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

Higman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K. & Coleman, J. J., Dec 1 1988, In : Applied Physics Letters. 53, 17, p. 1623-1625 3 p.

Research output: Contribution to journalArticle

19 Scopus citations

Theoretical and experimental investigations of the heterostructure hot electron diode

Emanuel, M. A., Higman, T. K., Higman, J. M., Kolodzey, J. M., Coleman, J. J. & Hess, K., Jan 1 1988, In : Solid State Electronics. 31, 3-4, p. 589-592 4 p.

Research output: Contribution to journalArticle

13 Scopus citations
1987

Observation of the transition associated with real-space transfer of a two-dimensional electron gas to a three-dimensional electron distribution in semiconductor heterolayers

Higman, T. K., Manion, S. J., Kizilyalli, I. C., Emanuel, M. A., Hess, K. & Coleman, J. J., Jan 1 1987, In : Physical Review B. 36, 17, p. 9381-9383 3 p.

Research output: Contribution to journalArticle

11 Scopus citations

SWITCHING MECHANISM IN THE HETEROSTRUCTURE HOT-ELECTRON DIODE.

Higman, T. K., Higman, J. M., Emanuel, M. A., Hess, K., Coleman, J. J. & Kolodzey, J., Nov 1 1987, In : IEEE Transactions on Electron Devices. ED-34, 11

Research output: Contribution to journalArticle

Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

Higman, T. K., Higman, J. M., Emanuel, M. A., Hess, K. & Coleman, J. J., Dec 1 1987, In : Journal of Applied Physics. 62, 4, p. 1495-1499 5 p.

Research output: Contribution to journalArticle

19 Scopus citations

VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

Higman, T. K., Higman, J. M., Emanuel, M. A., Hess, K., Coleman, J. J. & Kolodzey, J., Nov 1987, In : IEEE Transactions on Electron Devices. 34, 11, 1 p.

Research output: Contribution to journalArticle

1986

New ultrafast switching mechanism in semiconductor heterostructures

Hess, K., Higman, T. K., Emanuel, M. A. & Coleman, J. J., Dec 1 1986, In : Journal of Applied Physics. 60, 10, p. 3775-3777 3 p.

Research output: Contribution to journalArticle

74 Scopus citations

Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructures

Higman, T. K., Emanuel, M. A., Coleman, J. J., Jeng, S. J. & Wayman, C. M., Dec 1 1986, In : Journal of Applied Physics. 60, 2, p. 677-680 4 p.

Research output: Contribution to journalArticle

15 Scopus citations