Material Science
Activation Energy
5%
Aluminum
9%
Amorphous Silicon
7%
Annealing
9%
Capacitance
10%
Capacitor
6%
Carbon Nanotubes
13%
Charge Trapping
9%
Chemical Vapor Deposition
29%
Density
24%
Dielectric Material
17%
Electrical Resistivity
6%
Electronic Circuit
9%
Field Effect Transistors
5%
Film
100%
Gallium
18%
Hafnium
19%
Heterojunction
6%
Indium
17%
Lithography
6%
Low Pressure Chemical Vapor Deposition
9%
Metal Oxide
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Microelectromechanical System
6%
Monolayers
5%
Nanoparticle
29%
Nitride Compound
9%
Oxide Compound
37%
Particle Formation
7%
Permittivity
26%
Photovoltaics
9%
Quantum Dot
7%
Schottky Barrier
5%
Silane
6%
Silicon
65%
Silicon Dioxide
12%
Silicon Nitride
7%
Single Crystal
19%
Solar Cell
28%
Surface (Surface Science)
23%
Thermal Stability
5%
Thin Films
19%
Tin
7%
Tin Dioxide
7%
Titanium
12%
Titanium Dioxide
29%
Transistor
13%
Zirconia
12%
Zirconium
6%
ZnO
11%
Keyphrases
Annealing
17%
Atomic Layer Deposition
11%
Band Gap
9%
Broken Gap
6%
Capacitors
7%
Charge Trapping
9%
Chemical Vapor Deposition
26%
Compositional Spread
7%
Copper Indium Gallium Selenide
11%
Dielectric
11%
Dielectric Constant
6%
Electrical Properties
8%
Fabrication Methods
7%
Gate Insulator
14%
Growth Rate
9%
Hafnium Oxide
14%
HfO2
36%
High Temperature
7%
High-permittivity
18%
Interface States
8%
Interfacial Layer
15%
Low Pressure
8%
Low Pressure Chemical Vapor Deposition (LPCVD)
13%
Low Temperature
10%
Metal Nitrates
8%
Metal Oxide
12%
MOSFET
13%
Multi-walled Carbon Nanotubes (MWCNTs)
8%
Multicrystalline Silicon
11%
Nanocrystals
7%
Nanoparticles
15%
Nitrate
9%
Oxides
17%
P-type
12%
Particle Formation
10%
Rapid Thermal Processing
8%
Reactor
7%
Rutile
32%
Si(111)
6%
Silane
9%
Silica
28%
Silica Nanoparticles (SiNPs)
18%
Silicon Nanocrystals
13%
Silicon Nitride
7%
Single Crystal
11%
Solar Cell
19%
Tandem Solar Cells
7%
Transistor
8%
Wafer
16%
Zirconium Dioxide
12%
Engineering
Activation Energy
6%
Atomic Layer Deposition
7%
Band Gap
21%
Carbon Nanotubes
5%
Chemical Vapor Deposition
30%
Deposited Film
11%
Dielectrics
18%
Electrical Measurement
5%
Forming Gas Anneal
5%
Gas-Phase
6%
Gate Stack
8%
Interface State
13%
Interfacial Layer
20%
Lithography
6%
Low-Temperature
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Nanoparticles
13%
Nitride
8%
Oxide Thickness
5%
Passivation
6%
Polycrystalline
7%
Rapid Thermal Processing
8%
Schottky Barrier
6%
Silicon Dioxide
32%
Silicon Nanocrystal
5%
Silicon Nanoparticle
13%
Silicon Substrate
5%
Single-Walled Carbon Nanotube
5%
Solar Cell
23%
Thin Films
26%
Torr
5%
Tunnel
7%
Tunnel Construction
6%
Vapor Deposition
28%