Material Science
Film
100%
Silicon
64%
Oxide Compound
37%
Nanoparticle
29%
Titanium Dioxide
29%
Chemical Vapor Deposition
29%
Solar Cell
28%
Permittivity
26%
Density
24%
Surface (Surface Science)
23%
Phase Composition
19%
Thin Films
19%
Hafnium
19%
Single Crystal
19%
Metal Oxide
18%
Gallium
18%
Dielectric Material
17%
Indium
17%
Transistor
13%
Carbon Nanotubes
13%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Silicon Dioxide
12%
Titanium
12%
Zirconia
12%
ZnO
11%
Capacitance
10%
Electronic Circuit
9%
Annealing
9%
Charge Trapping
9%
Photovoltaics
9%
Aluminum
9%
Low Pressure Chemical Vapor Deposition
9%
Nitride Compound
9%
Oxidation Reaction
8%
Amorphous Silicon
7%
Silicon Nitride
7%
Tin
7%
Quantum Dot
7%
Tin Dioxide
7%
Particle Formation
7%
Lithography
6%
Capacitor
6%
Electrical Resistivity
6%
Zirconium
6%
Silane
6%
Heterojunction
6%
Microelectromechanical System
6%
Field Effect Transistors
5%
Thermal Stability
5%
Monolayers
5%
Keyphrases
HfO2
36%
Rutile
32%
Silica
28%
Chemical Vapor Deposition
26%
Solar Cell
19%
High-permittivity
18%
Silica Nanoparticles (SiNPs)
18%
Annealing
17%
Oxides
17%
Wafer
16%
Interfacial Layer
15%
Nanoparticles
15%
Gate Insulator
14%
Hafnium Oxide
14%
Silicon Nanocrystals
13%
MOSFET
13%
Low Pressure Chemical Vapor Deposition (LPCVD)
13%
Zirconium Dioxide
12%
Metal Oxide
12%
P-type
12%
Atomic Layer Deposition
11%
Dielectric
11%
Copper Indium Gallium Selenide
11%
Single Crystal
11%
Multicrystalline Silicon
11%
Particle Formation
10%
Low Temperature
10%
Growth Rate
9%
Band Gap
9%
Silane
9%
Charge Trapping
9%
Nitrate
9%
Electrical Properties
8%
Interface States
8%
Multi-walled Carbon Nanotubes (MWCNTs)
8%
Metal Nitrates
8%
Low Pressure
8%
Transistor
8%
Rapid Thermal Processing
8%
Silicon Nitride
7%
Fabrication Methods
7%
Reactor
7%
Tandem Solar Cells
7%
High Temperature
7%
Nanocrystals
7%
Capacitors
7%
Compositional Spread
7%
Dielectric Constant
6%
Broken Gap
6%
Si(111)
6%
Engineering
Silicon Dioxide
32%
Chemical Vapor Deposition
30%
Vapor Deposition
28%
Thin Films
26%
Solar Cell
22%
Band Gap
21%
Interfacial Layer
19%
Phase Composition
19%
Dielectrics
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Silicon Nanoparticle
13%
Interface State
13%
Nanoparticles
13%
Low-Temperature
12%
Deposited Film
10%
Rapid Thermal Processing
8%
Nitride
8%
Gate Stack
8%
Polycrystalline
7%
Atomic Layer Deposition
7%
Schottky Barrier
6%
Gas-Phase
6%
Activation Energy
6%
Tunnel Construction
6%
Lithography
6%
Passivation
6%
Single-Walled Carbon Nanotube
5%
Carbon Nanotubes
5%
Silicon Nanocrystal
5%
Silicon Substrate
5%
Torr
5%
Forming Gas Anneal
5%