Engineering & Materials Science
Chemical vapor deposition
100%
Silicon
85%
Oxides
56%
Solar cells
56%
Metals
54%
Nanocrystals
52%
Permittivity
51%
Thin films
50%
Nanoparticles
47%
Gallium
46%
Plasmas
43%
Nitrates
43%
Indium
40%
Temperature
38%
Hafnium
36%
Interface states
35%
Atomic layer deposition
34%
Low pressure chemical vapor deposition
33%
Copper
32%
Energy gap
32%
Single crystals
31%
Substrates
30%
Hafnium oxides
30%
Zirconium
29%
Tin dioxide
26%
Particle beams
25%
Rutherford backscattering spectroscopy
25%
Silanes
24%
Titanium
24%
Chemical analysis
23%
Rapid thermal processing
22%
Transistors
22%
Oxide films
21%
Charge trapping
20%
Silica
20%
Hot Temperature
19%
Annealing
19%
Nitrides
19%
Mass spectrometers
18%
Carbon nanotubes
17%
Titanium dioxide
17%
Oxygen
17%
Amorphous silicon
16%
Fabrication
16%
Inversion layers
16%
Tin
15%
Zinc oxide
15%
Single-walled carbon nanotubes (SWCN)
15%
Spectrometry
14%
Organic chemicals
14%
Chemical Compounds
Liquid Film
74%
Chemical Vapour Deposition
50%
Low Pressure Chemical Vapour Deposition
28%
Nitrate
28%
Nanocrystal
28%
Hafnium Atom
27%
Metal Oxide
27%
Interface State
27%
Plasma
24%
Diselenide
23%
Oxide
22%
Atomic Layer Epitaxy
22%
Tin Dioxide
22%
Band Gap
22%
Permittivity
19%
Silicon Nanoparticle
19%
Particle Beam
18%
Capacitor
17%
Nonconductor
17%
Rutherford Backscattering Spectroscopy
16%
Silane
16%
Dielectric Material
16%
Annealing
16%
Tandem Solar Cell
15%
Dielectric Constant
14%
Semiconductor
14%
Etching
14%
Amorphous Material
12%
Single Walled Nanotube
12%
Application
12%
Field Effect
11%
Voltage
11%
Pressure
11%
Surface
10%
Compound Mobility
10%
Rapid Thermal Annealing
10%
Selenide
9%
Tunneling
9%
Titanium Dioxide
9%
Particle Size Distribution
8%
Polycrystalline Film
8%
Polycrystalline Solid
8%
Ozone
8%
Single Crystalline Solid
8%
Sputter Deposition
7%
Physics & Astronomy
silicon
36%
vapor deposition
27%
nanocrystals
23%
oxides
20%
permittivity
18%
nanoparticles
17%
wafers
17%
carbon nanotubes
16%
hafnium
16%
low pressure
16%
synthesis
15%
metal oxide semiconductors
15%
dioxides
14%
tin
14%
thin films
13%
insulators
12%
atomic layer epitaxy
12%
gallium
12%
solar cells
11%
indium
10%
metal oxides
10%
single crystals
10%
copper
10%
oxidation
10%
chambers
10%
characterization
10%
amorphous silicon
10%
temperature
10%
silicon dioxide
9%
hafnium oxides
9%
electric potential
9%
trapping
9%
ozone
9%
traps
9%
field effect transistors
9%
degradation
8%
titanium
8%
oxide films
8%
reactors
8%
etching
8%
leakage
8%
silanes
8%
absorbers
8%
electrons
7%
metals
7%
lithography
7%
breakdown
7%
integrated circuits
7%
capacitance
7%
transistors
7%
