1988 …2019
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Research Output 1988 2019

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Conference article
2000
28 Citations (Scopus)

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.

Research output: Contribution to journalConference article

Hot carriers
Degradation
Networks (circuits)
Testing
Temperature
1998
30 Citations (Scopus)

Design in hot-carrier reliability for high performance logic applications

Fang, P., Tao, J., Chen, J. F. & Hu, C., Jan 1 1998, In : Proceedings of the Custom Integrated Circuits Conference. p. 525-531 7 p.

Research output: Contribution to journalConference article

Hot carriers
Degradation
Networks (circuits)
Logic design
Calibration

Performance and reliability of asymmetric LDD devices and logic gates

Chen, J. F., Tao, J., Fang, P. & Hu, C., Jan 1 1998, In : Proceedings of the Custom Integrated Circuits Conference. p. 533-536 4 p.

Research output: Contribution to journalConference article

Hot carriers
Logic gates
Carrier lifetime
1990
7 Citations (Scopus)

Characterizing a single hot-electron-induced trap in submicron MOSFET using random telegraph noise

Fang, P., Hung, K. K., Ko, P. K. & Hu, C., Dec 1 1990, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 37-38 2 p., 5727456.

Research output: Contribution to journalConference article

Telegraph
Hot electrons
Scattering
Drain current
Fermi level
11 Citations (Scopus)

Reliability simulator for interconnect and intermetallic contact electromigration

Liew, B. K., Fang, P., Cheung, N. W. & Hu, C., Dec 1 1990, In : Annual Proceedings - Reliability Physics (Symposium). p. 111-118 8 p.

Research output: Contribution to journalConference article

Electromigration
Intermetallics
Simulators
Networks (circuits)
Safety factor
1989

Generation-recombination noise in GaAs p+-i-n+ diodes

Lin, H. S., Colestock, P. A., Fang, P. & Chen, T. M., Dec 1 1989, In : Conference Proceedings - IEEE SOUTHEASTCON. 3, p. 1295-1297 3 p.

Research output: Contribution to journalConference article

Diodes
Activation energy
Temperature

Optimal doping profile for laser-induced diode linking in wafer-scale-integration

Fang, P., Sun, M. I. & Chen, T. M., Dec 1 1989, In : Conference Proceedings - IEEE SOUTHEASTCON. 3, p. 1421-1423 3 p.

Research output: Contribution to journalConference article

WSI circuits
Diodes
Doping (additives)
Lasers
Lagrange multipliers