1988 …2019
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Research Output 1988 2019

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2019

A Multiplexing Ripple Cancellation LED Driver with True Single-Stage Power Conversion and Flicker-Free Operation

Fang, P., Webb, S., Chen, Y., Liu, Y. F. & Sen, P. C., Oct 1 2019, In : IEEE Transactions on Power Electronics. 34, 10, p. 10105-10120 16 p., 8611392.

Research output: Contribution to journalArticle

Multiplexing
Light emitting diodes
Electric potential
Energy transfer
Lighting
1 Citation (Scopus)

LED Driver Achieves Electrolytic Capacitor-Less and Flicker-Free Operation with an Energy Buffer Unit

Fang, P., Sheng, B., Webb, S., Zhang, Y. & Liu, Y. F., Jul 1 2019, In : IEEE Transactions on Power Electronics. 34, 7, p. 6777-6793 17 p., 8493279.

Research output: Contribution to journalArticle

Electrolytic capacitors
Light emitting diodes
Energy storage
Electric potential
1 Citation (Scopus)

Single-Stage LED Driver Achieves Electrolytic Capacitor-Less and Flicker-Free Operation with Unidirectional Current Compensator

Fang, P., Webb, S., Liu, Y. F. & Sen, P. C., Jul 1 2019, In : IEEE Transactions on Power Electronics. 34, 7, p. 6760-6776 17 p., 8486664.

Research output: Contribution to journalArticle

Electrolytic capacitors
Light emitting diodes
Electric potential
Capacitors
Topology
2001
35 Citations (Scopus)

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Degradation
Hot carriers
Deuterium
Electric potential
Metallizing
2000
27 Citations (Scopus)

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Deuterium
Anodes
Hydrogen
Oxides
Metallizing
3 Citations (Scopus)

Model parameter extraction for MOSFETs hot carrier degradation/Age

Yang, M., Yu, Q., Wang, X., Chen, Y., Liu, Y., Xiao, B., Yang, P. & Fang, P., Mar 1 2000, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 21, 3, p. 268-273 6 p.

Research output: Contribution to journalArticle

Parameter extraction
Hot carriers
field effect transistors
degradation
Complement Factor H
1999
19 Citations (Scopus)

Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Chen, J. F., Tao, J., Fang, P. & Hu, C., Dec 1 1999, In : IEEE Journal of Solid-State Circuits. 34, 3, p. 367-371 5 p.

Research output: Contribution to journalArticle

Hot carriers
Logic gates
Carrier lifetime
1998
12 Citations (Scopus)

0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology

Chen, J. F., Tao, J., Fang, P. & Hu, C., Jul 1 1998, In : IEEE Electron Device Letters. 19, 7, p. 216-218 3 p.

Research output: Contribution to journalArticle

Hot carriers
Carrier lifetime
2 Citations (Scopus)

Experimental studies on deep submicron CMOS scaling

Chen, K., Hu, C., Fang, P., Gupta, A., Lin, M. R. & Wollesen, D. L., Jul 1 1998, In : Semiconductor Science and Technology. 13, 7, p. 816-820 5 p.

Research output: Contribution to journalArticle

Oxides
Analytical models
CMOS
oscillators
scaling
1 Citation (Scopus)

Two experimental methods to characterize load capacitance of a CMOS gate

Chen, K., Hu, C., Fang, P., Lin, M. R. & Wollesen, D. L., Jul 1 1998, In : Semiconductor Science and Technology. 13, 7, p. 773-775 3 p.

Research output: Contribution to journalArticle

CMOS
Capacitance
capacitance
Oxides
Electric potential
1997
31 Citations (Scopus)

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Gupta, A., Fang, P., Song, M., Lin, M. R., Wollesen, D., Chen, K. & Hu, C., Dec 1 1997, In : IEEE Electron Device Letters. 18, 12, p. 580-582 3 p.

Research output: Contribution to journalArticle

Polysilicon
Oxides
Doping (additives)
Electric potential
Field emission
16 Citations (Scopus)

Experimental confirmation of an accurate CMOS gate delay model for gate oxide and voltage scaling

Chen, K., Hu, C., Fang, P. & Gupta, A., Jun 1 1997, In : IEEE Electron Device Letters. 18, 6, p. 275-277 3 p.

Research output: Contribution to journalArticle

Oxides
Electric current measurement
Capacitance
Electric potential
Voltage scaling
3 Citations (Scopus)

Optimizing quarter and sub-quarter micron cmos circuit speed considering interconnect loading effects

Chen, K., Hu, C. & Fang, P., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 9, p. 1556-1558 3 p.

Research output: Contribution to journalArticle

Networks (circuits)
Oxides
53 Citations (Scopus)

Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects

Chen, K., Hu, C., Fang, P., Lin, M. R., Wollesen, D. L. & Associate, Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 11, p. 1951-1957 7 p.

Research output: Contribution to journalArticle

Oxides
Electric potential
Voltage scaling
1994
10 Citations (Scopus)

Characterization and Optimization of Metal Etch Processes to Minimize Charging Damage to Submicron Transistor Gate Oxide

Lin, M. R., Fang, P., Heiler, F., Lee, R., Rakkhit, R. & Shen, L., Jan 1 1994, In : IEEE Electron Device Letters. 15, 1, p. 25-27 3 p.

Research output: Contribution to journalArticle

Reactive ion etching
Oxides
Transistors
Metals
Aluminum
5 Citations (Scopus)

Hot-Carrier-Induced Off-State Current Leakage in Submicrometer PMOSFET Devices

Fang, H., Fang, P. & Yue, J. T., Jan 1 1994, In : IEEE Electron Device Letters. 15, 11, p. 463-465 3 p.

Research output: Contribution to journalArticle

Hot carriers
Leakage currents
Electric potential
1993
3 Citations (Scopus)

An investigation of hot carrier effects in submicron CMOS integrated circuits

Fang, P., Rakkhit, R. & Yue, J. T., Jan 1 1993, In : Microelectronics Reliability. 33, 11-12, p. 1713-1727 15 p.

Research output: Contribution to journalArticle

CMOS integrated circuits
Hot carriers
integrated circuits
CMOS
alternating current
1992
28 Citations (Scopus)

Circuit Reliability Simulator for Interconnect, Via, and Contact Electromigration

Liew, B. K., Fang, P., Cheung, N. W. & Hu, C., Jan 1 1992, In : IEEE Transactions on Electron Devices. 39, 11, p. 2472-2479 8 p.

Research output: Contribution to journalArticle

Electromigration
Simulators
Networks (circuits)
Electric potential
Temperature
1991
40 Citations (Scopus)

Hot-Electron-Induced Traps Studied Through the Random Telegraph Noise

Fang, P., Hung, K. K., Ko, P. K. & Hu, C., Jan 1 1991, In : IEEE Electron Device Letters. 12, 6, p. 273-275 3 p.

Research output: Contribution to journalArticle

Telegraph
Hot electrons
Hot carriers
Field effect transistors
Valence bands
1990
1 Citation (Scopus)

Noise Sources Across a Normal-to-Superconducting Boundary in Bulk YBa2Cu307-x

Fang, P., Hall, J., Chen, T. M., Dekker, A. J. & Van Der Ziel, A., Jan 1 1990, In : IEEE Electron Device Letters. 11, 5, p. 212-214 3 p.

Research output: Contribution to journalArticle

Fluxes
Experiments
barium copper yttrium oxide
2 Citations (Scopus)

Two different methods of determining electromigration parameters associated with resistance change

van der Ziel, A., Chen, T. M. & Fang, P., Jan 1 1990, In : Solid State Electronics. 33, 8, p. 1025-1027 3 p.

Research output: Contribution to journalArticle

Electromigration
electromigration
Laplace transforms
Fast Fourier transforms
Fourier transforms
1989
12 Citations (Scopus)

1/f noise characterization of n+-p and n-i-p Hg1-x CdxTe detectors

van der Ziel, A., Fang, P., He, L., Wu, X. L., van Rheenen, A. D. & Handel, P. H., Jan 1 1989, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 7, 2, p. 550-554 5 p.

Research output: Contribution to journalArticle

Diodes
Detectors
detectors
Photodiodes
p-i-n diodes
1 Citation (Scopus)

1/f noise study in vacuum photodiodes

Fang, P., He, L., Peng, Q., Kang, H. & Van Der Ziel, A., Dec 1 1989, In : Journal of Applied Physics. 65, 4, p. 1766-1770 5 p.

Research output: Contribution to journalArticle

photodiodes
vacuum
anodes
cathodes
dynodes
3 Citations (Scopus)

Generation-recombination-type 1 f{hook} noise in nip diodes

van der Ziel, A., He, L., van Rheenen, A. D. & Fang, P., Jan 1 1989, In : Solid State Electronics. 32, 10, p. 905-907 3 p.

Research output: Contribution to journalArticle

hooks
Diodes
diodes
Electrons
International System of Units
6 Citations (Scopus)

Noise and lifetime measurements in Si p + -i-n power diodes

Fang, P., He, L., van Rheenen, A. D., van der Ziel, A. & Peng, Q., Jan 1 1989, In : Solid State Electronics. 32, 5, p. 345-348 4 p.

Research output: Contribution to journalArticle

Shot noise
hooks
noise measurement
diodes
life (durability)

Secondary emission 1/f noise revisited

Van Der Ziel, A., Fang, P. & Van Rheenen, A. D., Dec 1 1989, In : Journal of Applied Physics. 66, 6, p. 2736-2738 3 p.

Research output: Contribution to journalArticle

secondary emission
electron trajectories
tubes
pentodes
dynodes
1988
2 Citations (Scopus)

Study of secondary emission 1/f{hook} noise

Fang, P. & Van der Ziel, A., Jan 1 1988, In : Physica B+C. 147, 2-3, p. 311-315 5 p.

Research output: Contribution to journalArticle

Secondary emission
Cathodes
Lead
Electric potential
Experiments