1988 …2019
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Research Output 1988 2019

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Paper
1999
7 Citations (Scopus)

Dependence of HCI mechanism on temperature for 0.18 um technology and beyond

Wang, W., Tao, J. & Fang, P., Dec 1 1999, p. 66-68. 3 p.

Research output: Contribution to conferencePaper

Hot carriers
Degradation
Substrates
Temperature
Electrons
1998
1 Citation (Scopus)

CMOS hot carrier lifetime improvement from deuterium anneal

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Dec 1 1998, p. 22-23. 2 p.

Research output: Contribution to conferencePaper

Hot carriers
Carrier lifetime
Interface states
Deuterium
Hot electrons
1997

Accurate models for CMOS scaling and gate delay in deep sub-micron regime

Chen, K., Hu, C., Fang, P., Gupta, A., Lin, M. R. & Wollesen, D. L., Jan 1 1997, p. 261-264. 4 p.

Research output: Contribution to conferencePaper

Inversion layers
Capacitance
Degradation

Experimental and analytical studies on CMOS scaling in deep submicron regime including quantum and polysilicon gate depletion effects

Chen, K., Hu, C., Fang, P., Gupta, A., Lim, M. R. & Wollesen, D., Jan 1 1997, p. 20-21. 2 p.

Research output: Contribution to conferencePaper

Polysilicon
Oxides
Analytical models
Electric potential
1995

Circuit hot carrier reliability simulation in advanced CMOS technology process development

Fang, P., Li, P. C. & Yue, J. T., Dec 1 1995, p. 413-415. 3 p.

Research output: Contribution to conferencePaper

Hot carriers
Networks (circuits)
Degradation
Crosstalk
Electric potential
1994
2 Citations (Scopus)

Circuit hot carrier reliability simulation in advanced CMOS process technology development

Fang, P., Li, P. C. & Yue, J. T., Dec 1 1994, p. 73-78. 6 p.

Research output: Contribution to conferencePaper

Hot carriers
Networks (circuits)
Degradation
Crosstalk
Electric potential