1988 …2019
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Research Output 1988 2019

2019

A multiplexing ripple cancellation LED driver with true single-stage power conversion and flicker-free operation

Fang, P., Liu, Y. F. & Sen, P. C., May 24 2019, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., p. 3414-3420 7 p. 8722000. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Multiplexing
Light emitting diodes
Electric potential
Energy transfer
Lighting
2001
35 Citations (Scopus)

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Degradation
Hot carriers
Deuterium
Electric potential
Metallizing
2000
27 Citations (Scopus)

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Deuterium
Anodes
Hydrogen
Oxides
Metallizing
28 Citations (Scopus)

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.

Research output: Contribution to journalConference article

Hot carriers
Degradation
Networks (circuits)
Testing
Temperature
3 Citations (Scopus)

Model parameter extraction for MOSFETs hot carrier degradation/Age

Yang, M., Yu, Q., Wang, X., Chen, Y., Liu, Y., Xiao, B., Yang, P. & Fang, P., Mar 1 2000, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 21, 3, p. 268-273 6 p.

Research output: Contribution to journalArticle

Parameter extraction
Hot carriers
field effect transistors
degradation
Complement Factor H
1999
7 Citations (Scopus)

Dependence of HCI mechanism on temperature for 0.18 um technology and beyond

Wang, W., Tao, J. & Fang, P., Dec 1 1999, p. 66-68. 3 p.

Research output: Contribution to conferencePaper

Hot carriers
Degradation
Substrates
Temperature
Electrons
60 Citations (Scopus)

Hot carrier effects in nMOSFETs in 0.1μm CMOS technology

Li, E., Rosenbaum, E., Tao, J., Yeap, G. C. F., Lin, M. R. & Fang, P., Jan 1 1999, Annual Proceedings - Reliability Physics (Symposium). Institute of Electrical and Electronics Engineers Inc., p. 253-258 6 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Bias currents
Carrier lifetime
Deuterium
Metallizing
19 Citations (Scopus)

Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Chen, J. F., Tao, J., Fang, P. & Hu, C., Dec 1 1999, In : IEEE Journal of Solid-State Circuits. 34, 3, p. 367-371 5 p.

Research output: Contribution to journalArticle

Hot carriers
Logic gates
Carrier lifetime
4 Citations (Scopus)

Use of a WLR technique to characterize voiding in 0.25 and 0.18 μm technologies for integrated circuits

Marathe, A., Besser, P., Tsiang, J., Tran, K., Pham, V., Tracy, B. & Fang, P., Jan 1 1999, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 291-295 5 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated circuits
Process monitoring
Metals
1998
12 Citations (Scopus)

0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology

Chen, J. F., Tao, J., Fang, P. & Hu, C., Jul 1 1998, In : IEEE Electron Device Letters. 19, 7, p. 216-218 3 p.

Research output: Contribution to journalArticle

Hot carriers
Carrier lifetime
1 Citation (Scopus)

CMOS hot carrier lifetime improvement from deuterium anneal

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Dec 1 1998, p. 22-23. 2 p.

Research output: Contribution to conferencePaper

Hot carriers
Carrier lifetime
Interface states
Deuterium
Hot electrons
30 Citations (Scopus)

Design in hot-carrier reliability for high performance logic applications

Fang, P., Tao, J., Chen, J. F. & Hu, C., Jan 1 1998, In : Proceedings of the Custom Integrated Circuits Conference. p. 525-531 7 p.

Research output: Contribution to journalConference article

Hot carriers
Degradation
Networks (circuits)
Logic design
Calibration
2 Citations (Scopus)

Experimental studies on deep submicron CMOS scaling

Chen, K., Hu, C., Fang, P., Gupta, A., Lin, M. R. & Wollesen, D. L., Jul 1 1998, In : Semiconductor Science and Technology. 13, 7, p. 816-820 5 p.

Research output: Contribution to journalArticle

Oxides
Analytical models
CMOS
oscillators
scaling

Performance and reliability of asymmetric LDD devices and logic gates

Chen, J. F., Tao, J., Fang, P. & Hu, C., Jan 1 1998, In : Proceedings of the Custom Integrated Circuits Conference. p. 533-536 4 p.

Research output: Contribution to journalConference article

Hot carriers
Logic gates
Carrier lifetime
1 Citation (Scopus)

Two experimental methods to characterize load capacitance of a CMOS gate

Chen, K., Hu, C., Fang, P., Lin, M. R. & Wollesen, D. L., Jul 1 1998, In : Semiconductor Science and Technology. 13, 7, p. 773-775 3 p.

Research output: Contribution to journalArticle

CMOS
Capacitance
capacitance
Oxides
Electric potential
1997
31 Citations (Scopus)

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Gupta, A., Fang, P., Song, M., Lin, M. R., Wollesen, D., Chen, K. & Hu, C., Dec 1 1997, In : IEEE Electron Device Letters. 18, 12, p. 580-582 3 p.

Research output: Contribution to journalArticle

Polysilicon
Oxides
Doping (additives)
Electric potential
Field emission

Accurate models for CMOS scaling and gate delay in deep sub-micron regime

Chen, K., Hu, C., Fang, P., Gupta, A., Lin, M. R. & Wollesen, D. L., Jan 1 1997, p. 261-264. 4 p.

Research output: Contribution to conferencePaper

Inversion layers
Capacitance
Degradation

Experimental and analytical studies on CMOS scaling in deep submicron regime including quantum and polysilicon gate depletion effects

Chen, K., Hu, C., Fang, P., Gupta, A., Lim, M. R. & Wollesen, D., Jan 1 1997, p. 20-21. 2 p.

Research output: Contribution to conferencePaper

Polysilicon
Oxides
Analytical models
Electric potential
16 Citations (Scopus)

Experimental confirmation of an accurate CMOS gate delay model for gate oxide and voltage scaling

Chen, K., Hu, C., Fang, P. & Gupta, A., Jun 1 1997, In : IEEE Electron Device Letters. 18, 6, p. 275-277 3 p.

Research output: Contribution to journalArticle

Oxides
Electric current measurement
Capacitance
Electric potential
Voltage scaling
3 Citations (Scopus)

Optimizing quarter and sub-quarter micron cmos circuit speed considering interconnect loading effects

Chen, K., Hu, C. & Fang, P., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 9, p. 1556-1558 3 p.

Research output: Contribution to journalArticle

Networks (circuits)
Oxides
53 Citations (Scopus)

Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects

Chen, K., Hu, C., Fang, P., Lin, M. R., Wollesen, D. L. & Associate, Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 11, p. 1951-1957 7 p.

Research output: Contribution to journalArticle

Oxides
Electric potential
Voltage scaling
1995

Circuit hot carrier reliability simulation in advanced CMOS technology process development

Fang, P., Li, P. C. & Yue, J. T., Dec 1 1995, p. 413-415. 3 p.

Research output: Contribution to conferencePaper

Hot carriers
Networks (circuits)
Degradation
Crosstalk
Electric potential
1994
5 Citations (Scopus)

Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models

Peng, J. Z., Lin, Q., Fang, P., Kwan, M., Longcor, S. & Lien, J., Jan 1 1994, Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, p. 154-160 7 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Physics
Degradation
Oxides
Interface states
10 Citations (Scopus)

Characterization and Optimization of Metal Etch Processes to Minimize Charging Damage to Submicron Transistor Gate Oxide

Lin, M. R., Fang, P., Heiler, F., Lee, R., Rakkhit, R. & Shen, L., Jan 1994, In : IEEE Electron Device Letters. 15, 1, p. 25-27 3 p.

Research output: Contribution to journalArticle

Reactive ion etching
Oxides
Transistors
Metals
Aluminum
2 Citations (Scopus)

Circuit hot carrier reliability simulation in advanced CMOS process technology development

Fang, P., Li, P. C. & Yue, J. T., Dec 1 1994, p. 73-78. 6 p.

Research output: Contribution to conferencePaper

Hot carriers
Networks (circuits)
Degradation
Crosstalk
Electric potential
5 Citations (Scopus)

Hot-Carrier-Induced Off-State Current Leakage in Submicrometer PMOSFET Devices

Fang, H., Fang, P. & Yue, J. T., Nov 1994, In : IEEE Electron Device Letters. 15, 11, p. 463-465 3 p.

Research output: Contribution to journalArticle

Hot carriers
Leakage currents
Electric potential
3 Citations (Scopus)

iRULE: fast hot-carrier reliability diagnosis using macro-models

Teng, C. C., Sun, W., Kang, S. M., Fang, P. & Yue, J., Jan 1 1994, Proceedings of the Custom Integrated Circuits Conference. Anon (ed.). Publ by IEEE, p. 421-424 4 p. (Proceedings of the Custom Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Macros
Transistors
Networks (circuits)
VLSI circuits
1993
3 Citations (Scopus)

An investigation of hot carrier effects in submicron CMOS integrated circuits

Fang, P., Rakkhit, R. & Yue, J. T., Sep 1993, In : Microelectronics Reliability. 33, 11-12, p. 1713-1727 15 p.

Research output: Contribution to journalArticle

CMOS integrated circuits
Hot carriers
integrated circuits
CMOS
alternating current
11 Citations (Scopus)

Process induced oxide damage and its implications to device reliability of submicron transistors

Rakkhit, R., Heiler, F. P., Fang, P. & Sander, C., Jan 1 1993, Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, p. 292-296 5 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
Oxides
Antennas
Hot carriers
Deterioration
1992
4 Citations (Scopus)

A method to project hot carrier induced punch through voltage reduction for deep submicron LDD PMOS FETs at room and elevated temperatures

Fang, P., Yue, J. T. & Wollessen, D., Mar 1 1992, Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, p. 131-135 5 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Hot electrons
Field effect transistors
Electric potential
High temperature effects
28 Citations (Scopus)

Circuit Reliability Simulator for Interconnect, Via, and Contact Electromigration

Liew, B. K., Fang, P., Cheung, N. W. & Hu, C., Nov 1992, In : IEEE Transactions on Electron Devices. 39, 11, p. 2472-2479 8 p.

Research output: Contribution to journalArticle

Electromigration
Simulators
Networks (circuits)
Electric potential
Temperature
9 Citations (Scopus)

Interface quality of SOI MOSFET's reflected in noise and mobility

Chen, J., Lee, A., Fang, P., Solomon, R., Chan, T., Ko, P. & Hu, C., Jan 1 1992, 1991 IEEE International SOI Conference Proceedings. Publ by IEEE, p. 100-101 2 p. (1991 IEEE International SOI Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Transistors
Oxygen
18 Citations (Scopus)

Simulation of CMOS circuit degradation due to hot-carrier effects

Quader, K. N., Ko, P. K., Hu, C., Fang, P. & Yue, J. T., Mar 1 1992, Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, p. 16-23 8 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Degradation
Networks (circuits)
Transistors
Drain current
1991
41 Citations (Scopus)

Hot-Electron-Induced Traps Studied Through the Random Telegraph Noise

Fang, P., Hung, K. K., Ko, P. K. & Hu, C., Jan 1 1991, In : IEEE Electron Device Letters. 12, 6, p. 273-275 3 p.

Research output: Contribution to journalArticle

Telegraph
Hot electrons
Hot carriers
Field effect transistors
Valence bands
1990
7 Citations (Scopus)

Characterizing a single hot-electron-induced trap in submicron MOSFET using random telegraph noise

Fang, P., Hung, K. K., Ko, P. K. & Hu, C., Dec 1 1990, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 37-38 2 p., 5727456.

Research output: Contribution to journalConference article

Telegraph
Hot electrons
Scattering
Drain current
Fermi level
29 Citations (Scopus)

Noise overshoot at drain current kink in SOI MOSFET

Chen, J., Fang, P., Ko, P. K., Hu, C., Solomon, R., Chan, T. Y. & Sodini, C. G., Jan 1 1990, 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 40-41 2 p. 145699. (1990 IEEE SOS/SOI Technology Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Drain current
Networks (circuits)
1 Citation (Scopus)

Noise Sources Across a Normal-to-Superconducting Boundary in Bulk YBa2Cu307-x

Fang, P., Hall, J., Chen, T. M., Dekker, A. J. & Van Der Ziel, A., May 1990, In : IEEE Electron Device Letters. 11, 5, p. 212-214 3 p.

Research output: Contribution to journalArticle

Fluxes
Experiments
barium copper yttrium oxide
12 Citations (Scopus)

Reliability simulator for interconnect and intermetallic contact electromigration

Liew, B. K., Fang, P., Cheung, N. W. & Hu, C., Dec 1 1990, In : Annual Proceedings - Reliability Physics (Symposium). p. 111-118 8 p.

Research output: Contribution to journalConference article

Electromigration
Intermetallics
Simulators
Networks (circuits)
Safety factor
2 Citations (Scopus)

Two different methods of determining electromigration parameters associated with resistance change

van der Ziel, A., Chen, T. M. & Fang, P., Aug 1990, In : Solid State Electronics. 33, 8, p. 1025-1027 3 p.

Research output: Contribution to journalArticle

Electromigration
electromigration
Laplace transforms
Fast Fourier transforms
Fourier transforms
1989
13 Citations (Scopus)

1/f noise characterization of n+-p and n-i-p Hg1-x CdxTe detectors

van der Ziel, A., Fang, P., He, L., Wu, X. L., van Rheenen, A. D. & Handel, P. H., Jan 1 1989, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 7, 2, p. 550-554 5 p.

Research output: Contribution to journalArticle

Diodes
Detectors
detectors
Photodiodes
p-i-n diodes
1 Citation (Scopus)

1/f noise study in vacuum photodiodes

Fang, P., He, L., Peng, Q., Kang, H. & Van Der Ziel, A., Dec 1 1989, In : Journal of Applied Physics. 65, 4, p. 1766-1770 5 p.

Research output: Contribution to journalArticle

photodiodes
vacuum
anodes
cathodes
dynodes

Generation-recombination noise in GaAs p+-i-n+ diodes

Lin, H. S., Colestock, P. A., Fang, P. & Chen, T. M., Dec 1 1989, In : Conference Proceedings - IEEE SOUTHEASTCON. 3, p. 1295-1297 3 p.

Research output: Contribution to journalConference article

Diodes
Activation energy
Temperature
3 Citations (Scopus)

Generation-recombination-type 1 ƒ noise in nip diodes

van der Ziel, A., He, L., van Rheenen, A. D. & Fang, P., Oct 1989, In : Solid State Electronics. 32, 10, p. 905-907 3 p.

Research output: Contribution to journalArticle

hooks
Diodes
diodes
Electrons
International System of Units
6 Citations (Scopus)

Noise and lifetime measurements in Si p+-i-n power diodes

Fang, P., He, L., van Rheenen, A. D., van der Ziel, A. & Peng, Q., May 1989, In : Solid State Electronics. 32, 5, p. 345-348 4 p.

Research output: Contribution to journalArticle

hooks
noise measurement
diodes
electrical impedance
life (durability)

Optimal doping profile for laser-induced diode linking in wafer-scale-integration

Fang, P., Sun, M. I. & Chen, T. M., Dec 1 1989, In : Conference Proceedings - IEEE SOUTHEASTCON. 3, p. 1421-1423 3 p.

Research output: Contribution to journalConference article

WSI circuits
Diodes
Doping (additives)
Lasers
Lagrange multipliers

Reliability and resistance minimization studies of the laser diffused diode links in wafer-scale-integration

Fang, P., Massiha, G. H., Chen, T. M. & Cottle, J. G., Jan 1 1989, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. Ryssel, H., Heuberger, A. & Lange, P. (eds.). IEEE Computer Society, p. 837-840 4 p. 5436471. (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

WSI circuits
Electromigration
Semiconductor lasers
Joule heating
Oxides

Secondary emission 1/f noise revisited

Van Der Ziel, A., Fang, P. & Van Rheenen, A. D., Dec 1 1989, In : Journal of Applied Physics. 66, 6, p. 2736-2738 3 p.

Research output: Contribution to journalArticle

secondary emission
electron trajectories
tubes
pentodes
dynodes
1988
2 Citations (Scopus)

Study of secondary emission 1/ƒ noise

Fang, P. & Van der Ziel, A., Jan 1 1988, In : Physica B+C. 147, 2-3, p. 311-315 5 p.

Research output: Contribution to journalArticle

Secondary emission
Cathodes
Lead
Electric potential
Experiments