Research Output per year
Fingerprint The Fingerprint is created by mining the titles and abstracts of the person's research outputs and projects/funding awards to create an index of weighted terms from discipline-specific thesauri.
- 9 Similar Profiles
Hot carriers
Engineering & Materials Science
Oxides
Engineering & Materials Science
Degradation
Engineering & Materials Science
Networks (circuits)
Engineering & Materials Science
Electromigration
Engineering & Materials Science
Carrier lifetime
Engineering & Materials Science
Hot electrons
Engineering & Materials Science
Transistors
Engineering & Materials Science
Network
Recent external collaboration on country level. Dive into details by clicking on the dots.
Research Output 1988 2019
A multiplexing ripple cancellation LED driver with true single-stage power conversion and flicker-free operation
Fang, P., Liu, Y. F. & Sen, P. C., May 24 2019, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., p. 3414-3420 7 p. 8722000. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2019-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Multiplexing
Light emitting diodes
Electric potential
Energy transfer
Lighting
35
Citations
(Scopus)
Projecting lifetime of deep submicron MOSFETs
Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.Research output: Contribution to journal › Article
Degradation
Hot carriers
Deuterium
Electric potential
Metallizing
27
Citations
(Scopus)
Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown
Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.Research output: Contribution to journal › Article
Deuterium
Anodes
Hydrogen
Oxides
Metallizing
Hot carrier induced degradation in deep submicron MOSFETs at 100 °C
Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.Research output: Contribution to journal › Conference article
Hot carriers
Degradation
Networks (circuits)
Testing
Temperature
Model parameter extraction for MOSFETs hot carrier degradation/Age
Yang, M., Yu, Q., Wang, X., Chen, Y., Liu, Y., Xiao, B., Yang, P. & Fang, P., Mar 1 2000, In : Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 21, 3, p. 268-273 6 p.Research output: Contribution to journal › Article
Parameter extraction
Hot carriers
field effect transistors
degradation
Complement Factor H