Material Science
Carrier Concentration
28%
Density
11%
Doping (Additives)
7%
Electrical Resistivity
9%
Electron Mobility
15%
Energy Levels
13%
Epitaxial Film
8%
Epitaxy
5%
Ferroelectric Material
9%
Field Effect Transistors
9%
Film
100%
Film Thickness
6%
Heterojunction
26%
Lattice Constant
6%
Magnetism
7%
Magnetoresistance
7%
Metal Oxide
5%
Molecular Beam Epitaxy
64%
Oxide Compound
45%
Oxide Semiconductor
6%
Oxygen Vacancy
6%
Point Defect
5%
Reflection High-Energy Electron Diffraction
5%
Scanning Transmission Electron Microscopy
11%
Single Crystal
7%
Stannate
7%
Surface (Surface Science)
16%
Thermal Conductivity
5%
Thin Films
31%
Tin
5%
Titanium Dioxide
6%
Keyphrases
BaSnO3
33%
Carrier Concentration
5%
Carrier Density
7%
Cm(III)
5%
Complex Oxides
6%
Electron Density
6%
Electron Mobility
14%
Electronic Structure
6%
Electronic Transport
5%
Epitaxial
31%
Epitaxial Film
5%
Film Thickness
5%
Heterostructure
11%
High Mobility
12%
Homoepitaxial
5%
Hybrid Molecular Beam Epitaxy
28%
Insulator-metal Transition
5%
La-doped
8%
LaAlO3
8%
Low Temperature
6%
Magnetism
6%
Magnetoresistance
5%
Metal-organic Materials
10%
Molecular Beam Epitaxy
30%
Organic Molecular Beam Deposition
7%
Oxide Electronics
5%
Perovskite
9%
Perovskite Oxide
12%
Room Temperature
16%
Rutile
7%
Scanning Transmission Electron Microscopy
8%
Single-crystalline
5%
Solid Source
7%
SrSnO3
23%
SrTiO3
57%
SrTiO3 Film
12%
SrTiO3 Thin Film
6%
Stoichiometry
9%
Temperature Effect
8%
Wide Bandgap
7%