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Bharat Jalan

19982021
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Fingerprint The Fingerprint is created by mining the titles and abstracts of the person's research outputs and projects/funding awards to create an index of weighted terms from discipline-specific thesauri.

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defects Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Projects 1998 2021

Understanding and Controlling Defects, Disorder and Elec

Jalan, B.

National Science Foundation

8/15/17 → 7/31/21

Project: Research project

Oxides
Defects
perovskite

University of Minnesota Center for Quantum Materials

Greven, M., Chubukov, A. V., Fernandes, R. M., Jalan, B. & Leighton, C.

United States Department of Energy

8/15/16 → 8/14/19

Project: Research project

Design Principles for the Growth of High-quality Binary

Gladfelter, W. L., Cramer, C. & Jalan, B.

National Science Foundation

7/1/16 → 6/30/20

Project: Research project

stannic oxide

Ultra High-Density Complex Oxide Quantum Wells for Emerg

Jalan, B.

USDOD AIR FORCE

6/1/16 → 11/30/19

Project: Research project

emerging
quantum wells
oxides

MRSEC IRG-1: Electrostatic Control of Materials

Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.

9/1/98 → …

Project: Research project

Research Output 2007 2019

  • 50 Article
  • 2 Conference contribution
  • 1 Comment/debate
  • 1 Conference article
3 Citations (Scopus)

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Thoutam, L. R., Yue, J., Prakash, A., Wang, T., Elangovan, K. E. & Jalan, B., Feb 14 2019, In : ACS applied materials & interfaces.

Research output: Contribution to journal › Article

Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures

Thoutam, L. R., Yue, J., Xu, P. & Jalan, B., Jun 27 2019, In : Physical Review Materials. 3, 6, 065006.

Research output: Contribution to journal › Article

Heterojunctions
electronics
Vacancies
stoichiometry
crossovers

Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

Prakash, A. & Jalan, B., 2019, In : Advanced Materials Interfaces. p. 1900479

Research output: Contribution to journal › Article

4 Citations (Scopus)

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Chaganti, V. R. S. K., Prakash, A., Yue, J., Jalan, B. & Koester, S. J., Sep 1 2018, In : IEEE Electron Device Letters. 39, 9, p. 1381-1384 4 p., 8423108.

Research output: Contribution to journal › Article

MESFET devices
Demonstrations
Capacitance measurement
Ohmic contacts
Voltage measurement
5 Citations (Scopus)

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Yue, J., Prakash, A., Robbins, M. C., Koester, S. J. & Jalan, B., Jun 27 2018, In : ACS Applied Materials and Interfaces. 10, 25, p. 21061-21065 5 p.

Research output: Contribution to journal › Article

Field effect transistors
Metals
Gate dielectrics
Transconductance
MOSFET devices