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  • 5 Similar Profiles
Molecular beam epitaxy Engineering & Materials Science
molecular beam epitaxy Physics & Astronomy
Oxides Chemical Compounds
Heterojunctions Engineering & Materials Science
Carrier concentration Engineering & Materials Science
oxides Physics & Astronomy
Perovskite Engineering & Materials Science
defects Physics & Astronomy

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Projects 1998 2021

Research Output 2007 2019

  • 50 Article
  • 2 Conference contribution
  • 1 Comment/debate
  • 1 Conference article
3 Citations (Scopus)

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Thoutam, L. R., Yue, J., Prakash, A., Wang, T., Elangovan, K. E. & Jalan, B., Feb 14 2019, In : ACS applied materials & interfaces.

Research output: Contribution to journalArticle

Hopping transport in SrTiO3 / N d1-xTiO3 / SrTiO3 heterostructures

Thoutam, L. R., Yue, J., Xu, P. & Jalan, B., Jun 27 2019, In : Physical Review Materials. 3, 6, 065006.

Research output: Contribution to journalArticle

Heterojunctions
electronics
Vacancies
stoichiometry
crossovers

Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

Prakash, A. & Jalan, B., 2019, In : Advanced Materials Interfaces. p. 1900479

Research output: Contribution to journalArticle

4 Citations (Scopus)

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Chaganti, V. R. S. K., Prakash, A., Yue, J., Jalan, B. & Koester, S. J., Sep 1 2018, In : IEEE Electron Device Letters. 39, 9, p. 1381-1384 4 p., 8423108.

Research output: Contribution to journalArticle

MESFET devices
Demonstrations
Capacitance measurement
Ohmic contacts
Voltage measurement
5 Citations (Scopus)

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Yue, J., Prakash, A., Robbins, M. C., Koester, S. J. & Jalan, B., Jun 27 2018, In : ACS Applied Materials and Interfaces. 10, 25, p. 21061-21065 5 p.

Research output: Contribution to journalArticle

Field effect transistors
Metals
Gate dielectrics
Transconductance
MOSFET devices