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Bharat Jalan

19982021
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  • 6 Similar Profiles
Molecular beam epitaxy Engineering & Materials Science
molecular beam epitaxy Physics & Astronomy
Carrier concentration Engineering & Materials Science
Oxides Chemical Compounds
Heterojunctions Engineering & Materials Science
Perovskite Engineering & Materials Science
oxides Physics & Astronomy
defects Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Projects 1998 2021

Acquisition of Oxide Molecular Beam Epitaxy for Highly-P

Jalan, B., Gladfelter, W. L., James, R. D. & Pribiag, V.

USDOD AIR FORCE

7/15/18 → 7/14/19

Project: Research project

acquisition
molecular beam epitaxy
oxides
thin films

Understanding and Controlling Defects, Disorder and Elec

Jalan, B.

National Science Foundation

8/15/17 → 7/31/21

Project: Research project

Oxides
Defects
perovskite

University of Minnesota Center for Quantum Materials

Greven, M., Chubukov, A. V., Fernandes, R. M., Jalan, B. & Leighton, C.

United States Department of Energy

8/15/16 → 8/14/19

Project: Research project

Design Principles for the Growth of High-quality Binary

Gladfelter, W. L., Cramer, C. & Jalan, B.

National Science Foundation

7/1/16 → 6/30/19

Project: Research project

stannic oxide

Ultra High-Density Complex Oxide Quantum Wells for Emerg

Jalan, B.

USDOD AIR FORCE

6/1/16 → 5/31/19

Project: Research project

emerging
quantum wells
oxides

Research Output 2007 2018

  • 46 Article
  • 2 Conference contribution
  • 1 Comment/debate
  • 1 Conference article

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Chaganti, V. R. S. K., Prakash, A., Yue, J., Jalan, B. & Koester, S. J., Sep 1 2018, In : IEEE Electron Device Letters. 39, 9, p. 1381-1384 4 p., 8423108.

Research output: Contribution to journal › Article

MESFET devices
Demonstrations
Capacitance measurement
Ohmic contacts
Voltage measurement

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Yue, J., Prakash, A., Robbins, M. C., Koester, S. J. & Jalan, B., Jun 27 2018, In : ACS Applied Materials and Interfaces. 10, 25, p. 21061-21065 5 p.

Research output: Contribution to journal › Article

Field effect transistors
Metals
Gate dielectrics
Transconductance
MOSFET devices
1 Citations

Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

Yun, H., Topsakal, M., Prakash, A., Ganguly, K., Leighton, C., Jalan, B., Wentzcovitch, R. M., Mkhoyan, K. A. & Jeong, J. S., May 1 2018, In : Journal of Vacuum Science and Technology A. 36, 3, 031503.

Research output: Contribution to journal › Article

Electron energy loss spectroscopy
Electronic structure
energy dissipation
electron energy
electronic structure

Ferromagnetism and spin-dependent transport at a complex oxide interface

Ayino, Y., Xu, P., Tigre-lazo, J., Yue, J., Jalan, B. & Pribiag, V. S., 2018, In : Physical Review Materials. 2, 3

Research output: Contribution to journal › Article

1 Citations

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films

Nunn, W., Prakash, A., Bhowmik, A., Haislmaier, R., Yue, J., Garcia Lastra, J. M. & Jalan, B., Jun 1 2018, In : APL Materials. 6, 6, 066107.

Research output: Contribution to journal › Article

Molecular beam epitaxy
Permittivity
Metals
Epitaxial films
Point defects