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Bharat Jalan

19982021
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Projects 1998 2021

Acquisition of Oxide Molecular Beam Epitaxy for Highly-P

Jalan, B., Gladfelter, W. L., James, R. D. & Pribiag, V.

USDOD AIR FORCE

7/15/18 → 7/14/19

Project: Research project

acquisition
molecular beam epitaxy
oxides
thin films

Understanding and Controlling Defects, Disorder and Elec

Jalan, B.

National Science Foundation

8/15/17 → 7/31/21

Project: Research project

Oxides
Defects
perovskite

University of Minnesota Center for Quantum Materials

Greven, M., Chubukov, A. V., Fernandes, R. M., Jalan, B. & Leighton, C.

United States Department of Energy

8/15/16 → 8/14/19

Project: Research project

Design Principles for the Growth of High-quality Binary

Gladfelter, W. L., Cramer, C. & Jalan, B.

National Science Foundation

7/1/16 → 6/30/20

Project: Research project

stannic oxide

Ultra High-Density Complex Oxide Quantum Wells for Emerg

Jalan, B.

USDOD AIR FORCE

6/1/16 → 11/30/19

Project: Research project

emerging
quantum wells
oxides

Research Output 2007 2019

  • 48 Article
  • 2 Conference contribution
  • 1 Comment/debate
  • 1 Conference article

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Thoutam, L. R., Yue, J., Prakash, A., Wang, T., Elangovan, K. E. & Jalan, B., Feb 14 2019, In : ACS applied materials & interfaces.

Research output: Contribution to journal › Article

2 Citations (Scopus)

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Chaganti, V. R. S. K., Prakash, A., Yue, J., Jalan, B. & Koester, S. J., Sep 1 2018, In : IEEE Electron Device Letters. 39, 9, p. 1381-1384 4 p., 8423108.

Research output: Contribution to journal › Article

MESFET devices
Demonstrations
Capacitance measurement
Ohmic contacts
Voltage measurement
3 Citations (Scopus)

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Yue, J., Prakash, A., Robbins, M. C., Koester, S. J. & Jalan, B., Jun 27 2018, In : ACS Applied Materials and Interfaces. 10, 25, p. 21061-21065 5 p.

Research output: Contribution to journal › Article

Field effect transistors
Metals
Gate dielectrics
Transconductance
MOSFET devices
2 Citations (Scopus)

Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

Yun, H., Topsakal, M., Prakash, A., Ganguly, K., Leighton, C., Jalan, B., Wentzcovitch, R. M., Mkhoyan, K. A. & Jeong, J. S., May 1 2018, In : Journal of Vacuum Science and Technology A. 36, 3, 031503.

Research output: Contribution to journal › Article

Electron energy loss spectroscopy
Electronic structure
energy dissipation
electron energy
electronic structure
1 Citation (Scopus)

Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Wang, T., Prakash, A., Dong, Y., Truttmann, T., Bucsek, A., James, R., Fong, D. D., Kim, J. W., Ryan, P. J., Zhou, H., Birol, T. & Jalan, B., Dec 19 2018, In : ACS Applied Materials and Interfaces. 10, 50, p. 43802-43808 7 p.

Research output: Contribution to journal › Article

Electron mobility
Temperature
Electronic equipment
Oxides
Epitaxial films