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  • 8 Similar Profiles
Molecular beam epitaxy Engineering & Materials Science
molecular beam epitaxy Physics & Astronomy
Oxides Chemical Compounds
Carrier concentration Engineering & Materials Science
oxides Physics & Astronomy
Heterojunctions Engineering & Materials Science
Perovskite Engineering & Materials Science
Electron mobility Engineering & Materials Science

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Projects 1998 2021

Research Output 2007 2019

  • 48 Article
  • 2 Conference contribution
  • 1 Comment/debate
  • 1 Conference article

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Thoutam, L. R., Yue, J., Prakash, A., Wang, T., Elangovan, K. E. & Jalan, B., Feb 14 2019, In : ACS applied materials & interfaces.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Chaganti, V. R. S. K., Prakash, A., Yue, J., Jalan, B. & Koester, S. J., Sep 1 2018, In : IEEE Electron Device Letters. 39, 9, p. 1381-1384 4 p., 8423108.

Research output: Contribution to journalArticle

MESFET devices
Capacitance measurement
Ohmic contacts
Voltage measurement
3 Citations (Scopus)

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Yue, J., Prakash, A., Robbins, M. C., Koester, S. J. & Jalan, B., Jun 27 2018, In : ACS Applied Materials and Interfaces. 10, 25, p. 21061-21065 5 p.

Research output: Contribution to journalArticle

Field effect transistors
Gate dielectrics
MOSFET devices
2 Citations (Scopus)

Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

Yun, H., Topsakal, M., Prakash, A., Ganguly, K., Leighton, C., Jalan, B., Wentzcovitch, R. M., Mkhoyan, K. A. & Jeong, J. S., May 1 2018, In : Journal of Vacuum Science and Technology A. 36, 3, 031503.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
Electronic structure
energy dissipation
electron energy
electronic structure
1 Citation (Scopus)

Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Wang, T., Prakash, A., Dong, Y., Truttmann, T., Bucsek, A., James, R., Fong, D. D., Kim, J. W., Ryan, P. J., Zhou, H., Birol, T. & Jalan, B., Dec 19 2018, In : ACS Applied Materials and Interfaces. 10, 50, p. 43802-43808 7 p.

Research output: Contribution to journalArticle

Electron mobility
Electronic equipment
Epitaxial films