Research Output

Filter
Article
1989

Addendum to 'Flat-band voltage dependence on channel length in short-channel threshold model' (May 85 1001-1002)

Huang, J. S. T. & Schrankler, J. W., Jun 1 1989, In : IEEE Transactions on Electron Devices. 36, 6, 1 p.

Research output: Contribution to journalArticle

1 Scopus citations
1987

Switching Characteristics of Scaled CMOS Circuits at 77 K

Huang, J. S. T. & Schrankler, J. W., Jan 1987, In : IEEE Transactions on Electron Devices. 34, 1, p. 101-106 6 p.

Research output: Contribution to journalArticle

20 Scopus citations
1986

ENHANCED FULLY SCALED 1. 2- mu M CMOS PROCESS FOR ANALOG APPLICATIONS.

Reich, R. K., Rahn, C. H., Holt, M. S., Schrankler, J. W., Ju, D. H. & Kirchner, G. D., Apr 1 1986, In : IEEE Journal of Solid-State Circuits. SC-21, 2, p. 293-296 4 p.

Research output: Contribution to journalArticle

3 Scopus citations

Radiation-Dependent Hot-Carrier Effects

Reich, R. K., Schrankler, J. W., Ju, D. H., Holt, M. S. & Kirchner, G. D., Apr 1986, In : IEEE Electron Device Letters. 7, 4, p. 235-237 3 p.

Research output: Contribution to journalArticle

6 Scopus citations
1985

CMOS scaling implications for total dose radiation

Schrankler, J. W., Reich, R. K., Holt, M. S., Ju, D. H., Huang, J. S. T., Kirchner, G. D. & Hughes, H. L., Jan 1 1985, In : IEEE Transactions on Nuclear Science. 32, 6, p. 3988-3990 3 p.

Research output: Contribution to journalArticle

7 Scopus citations

Flat-Band Voltage Dependence on Channel Length in Short-Channel Threshold Model

Huang, J. S. T. & Schrankler, J. W., May 1985, In : IEEE Transactions on Electron Devices. 32, 5, p. 1001-1002 2 p.

Research output: Contribution to journalArticle

7 Scopus citations
1983

Improved Bipolar Transistor Performance in a VLSI CMOS Process

Yue, C. S., Huang, C. C., Schrankler, J. W., Pu, N. F., Kirchner, G. D. & Rahn, C., Aug 1983, In : IEEE Electron Device Letters. 4, 8, p. 294-296 3 p.

Research output: Contribution to journalArticle

6 Scopus citations